EP 1584100 A2 20051012 - A METHOD AND APPARATUS FOR FORMING A HIGH QUALITY LOW TEMPERATURE SILICON NITRIDE LAYER
Title (en)
A METHOD AND APPARATUS FOR FORMING A HIGH QUALITY LOW TEMPERATURE SILICON NITRIDE LAYER
Title (de)
VERFAHREN UND VORRICHTUNG ZUR HERSTELLUNG EINES HOCHQUALITÄTSFILMES BEI NIEDRIGTEMPERATUR
Title (fr)
PROCEDE ET APPAREIL DE FORMATION D'UNE COUCHE DE NITRURE DE SILICIUM DE HAUTE QUALITE, A FAIBLES TEMPERATURES
Publication
Application
Priority
- US 0340793 W 20031219
- US 43581302 P 20021220
- US 32746702 A 20021220
Abstract (en)
[origin: WO2004057653A2] A method of forming a silicon nitride layer is described. According to the present invention, a silicon nitride layer is deposited by thermally decomposing a silicon/nitrogen containing source gas or a silicon containing source gas and a nitrogen containing source gas at low deposition temperatures (e.g., less than 550 DEG C) to form a silicon nitride layer. The thermally deposited silicon nitride layer is then treated with hydrogen radicals to form a treated silicon nitride layer.
IPC 1-7
IPC 8 full level
C23C 16/34 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01); H01L 21/30 (2006.01); H01L 21/318 (2006.01); H01L 21/336 (2006.01); C23C 16/44 (2006.01); H01L 21/314 (2006.01)
CPC (source: EP KR US)
C23C 16/345 (2013.01 - EP KR); C23C 16/45523 (2013.01 - EP KR); C23C 16/56 (2013.01 - EP KR); H01L 21/0217 (2013.01 - KR US); H01L 21/02211 (2013.01 - EP KR US); H01L 21/02219 (2013.01 - EP KR US); H01L 21/02274 (2013.01 - EP KR US); H01L 21/3003 (2013.01 - EP KR); H01L 29/665 (2013.01 - EP KR); H01L 29/6659 (2013.01 - EP KR); H01L 21/0217 (2013.01 - EP)
Citation (search report)
See references of WO 2004057653A2
Designated contracting state (EPC)
DE NL
DOCDB simple family (publication)
WO 2004057653 A2 20040708; WO 2004057653 A3 20040812; AU 2003303136 A1 20040714; AU 2003303136 A8 20040714; EP 1584100 A2 20051012; JP 2006511087 A 20060330; KR 101022949 B1 20110316; KR 20050085779 A 20050829
DOCDB simple family (application)
US 0340793 W 20031219; AU 2003303136 A 20031219; EP 03813046 A 20031219; JP 2004562356 A 20031219; KR 20057011377 A 20031219