Global Patent Index - EP 1584100 A2

EP 1584100 A2 20051012 - A METHOD AND APPARATUS FOR FORMING A HIGH QUALITY LOW TEMPERATURE SILICON NITRIDE LAYER

Title (en)

A METHOD AND APPARATUS FOR FORMING A HIGH QUALITY LOW TEMPERATURE SILICON NITRIDE LAYER

Title (de)

VERFAHREN UND VORRICHTUNG ZUR HERSTELLUNG EINES HOCHQUALITÄTSFILMES BEI NIEDRIGTEMPERATUR

Title (fr)

PROCEDE ET APPAREIL DE FORMATION D'UNE COUCHE DE NITRURE DE SILICIUM DE HAUTE QUALITE, A FAIBLES TEMPERATURES

Publication

EP 1584100 A2 20051012 (EN)

Application

EP 03813046 A 20031219

Priority

  • US 0340793 W 20031219
  • US 43581302 P 20021220
  • US 32746702 A 20021220

Abstract (en)

[origin: WO2004057653A2] A method of forming a silicon nitride layer is described. According to the present invention, a silicon nitride layer is deposited by thermally decomposing a silicon/nitrogen containing source gas or a silicon containing source gas and a nitrogen containing source gas at low deposition temperatures (e.g., less than 550 DEG C) to form a silicon nitride layer. The thermally deposited silicon nitride layer is then treated with hydrogen radicals to form a treated silicon nitride layer.

IPC 1-7

H01L 21/00

IPC 8 full level

C23C 16/34 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01); H01L 21/30 (2006.01); H01L 21/318 (2006.01); H01L 21/336 (2006.01); C23C 16/44 (2006.01); H01L 21/314 (2006.01)

CPC (source: EP KR US)

C23C 16/345 (2013.01 - EP KR); C23C 16/45523 (2013.01 - EP KR); C23C 16/56 (2013.01 - EP KR); H01L 21/0217 (2013.01 - KR US); H01L 21/02211 (2013.01 - EP KR US); H01L 21/02219 (2013.01 - EP KR US); H01L 21/02274 (2013.01 - EP KR US); H01L 21/3003 (2013.01 - EP KR); H01L 29/665 (2013.01 - EP KR); H01L 29/6659 (2013.01 - EP KR); H01L 21/0217 (2013.01 - EP)

Citation (search report)

See references of WO 2004057653A2

Designated contracting state (EPC)

DE NL

DOCDB simple family (publication)

WO 2004057653 A2 20040708; WO 2004057653 A3 20040812; AU 2003303136 A1 20040714; AU 2003303136 A8 20040714; EP 1584100 A2 20051012; JP 2006511087 A 20060330; KR 101022949 B1 20110316; KR 20050085779 A 20050829

DOCDB simple family (application)

US 0340793 W 20031219; AU 2003303136 A 20031219; EP 03813046 A 20031219; JP 2004562356 A 20031219; KR 20057011377 A 20031219