EP 1588409 A1 20051026 - THIN-FILM SEMICONDUCTOR COMPONENT AND PRODUCTION METHOD FOR SAID COMPONENT
Title (en)
THIN-FILM SEMICONDUCTOR COMPONENT AND PRODUCTION METHOD FOR SAID COMPONENT
Title (de)
DÜNNFILMHALBLEITERBAUELEMENT UND VERFAHREN ZU DESSEN HERSTELLUNG
Title (fr)
COMPOSANT SEMI-CONDUCTEUR A COUCHE MINCE ET SON PROCEDE DE PRODUCTION
Publication
Application
Priority
- DE 2004000121 W 20040127
- DE 10303978 A 20030131
Abstract (en)
[origin: WO2004068567A1] The invention relates to a semiconductor component comprising a thin-film semiconductor body (2), which is located on a support (4) that contains germanium. The invention also relates to a method for producing a semiconductor component of this type.
IPC 1-7
IPC 8 full level
H01L 21/18 (2006.01); H01L 21/20 (2006.01); H01L 21/683 (2006.01); H01L 21/762 (2006.01); H01L 23/00 (2006.01); H01L 33/02 (2010.01); H01L 33/00 (2010.01); H01L 33/30 (2010.01)
CPC (source: EP KR US)
H01L 21/187 (2013.01 - EP US); H01L 21/6835 (2013.01 - EP US); H01L 24/29 (2013.01 - EP US); H01L 24/83 (2013.01 - EP US); H01L 33/00 (2013.01 - KR); H01L 33/02 (2013.01 - EP US); H01L 33/62 (2013.01 - KR); H01L 33/0093 (2020.05 - EP US); H01L 33/30 (2013.01 - EP US); H01L 2221/68354 (2013.01 - EP US); H01L 2224/29 (2013.01 - EP US); H01L 2224/291 (2013.01 - EP US); H01L 2224/29101 (2013.01 - EP US); H01L 2224/29144 (2013.01 - EP US); H01L 2224/29298 (2013.01 - EP US); H01L 2224/83001 (2013.01 - EP US); H01L 2224/8319 (2013.01 - EP US); H01L 2224/83224 (2013.01 - EP US); H01L 2224/83801 (2013.01 - EP US); H01L 2224/83805 (2013.01 - EP US); H01L 2924/00011 (2013.01 - EP US); H01L 2924/00013 (2013.01 - EP US); H01L 2924/01004 (2013.01 - EP US); H01L 2924/01005 (2013.01 - EP US); H01L 2924/01006 (2013.01 - EP US); H01L 2924/0101 (2013.01 - EP US); H01L 2924/01013 (2013.01 - EP US); H01L 2924/01015 (2013.01 - EP US); H01L 2924/01018 (2013.01 - EP US); H01L 2924/01023 (2013.01 - EP US); H01L 2924/01032 (2013.01 - EP US); H01L 2924/01033 (2013.01 - EP US); H01L 2924/01039 (2013.01 - EP US); H01L 2924/01049 (2013.01 - EP US); H01L 2924/0105 (2013.01 - EP US); H01L 2924/01051 (2013.01 - EP US); H01L 2924/0106 (2013.01 - EP US); H01L 2924/01075 (2013.01 - EP US); H01L 2924/01078 (2013.01 - EP US); H01L 2924/01079 (2013.01 - EP US); H01L 2924/0132 (2013.01 - EP US); H01L 2924/01322 (2013.01 - EP US); H01L 2924/014 (2013.01 - EP US); H01L 2924/10329 (2013.01 - EP US); H01L 2924/12036 (2013.01 - EP US); H01L 2924/12041 (2013.01 - EP US); H01L 2924/157 (2013.01 - EP US)
Citation (search report)
See references of WO 2004068567A1
Citation (examination)
- EP 0977280 A2 20000202 - IMEC INTER UNI MICRO ELECTR [BE], et al
- WO 0233760 A1 20020425 - OSRAM OPTO SEMICONDUCTORS GMBH [DE], et al
- JP 2001015798 A 20010119 - TOSHIBA CORP
Designated contracting state (EPC)
DE
DOCDB simple family (publication)
WO 2004068567 A1 20040812; CN 100524619 C 20090805; CN 1745458 A 20060308; EP 1588409 A1 20051026; JP 2006518102 A 20060803; JP 4904150 B2 20120328; KR 101058302 B1 20110822; KR 20050122200 A 20051228; KR 20110010839 A 20110207; TW 200417063 A 20040901; TW I237909 B 20050811; US 2006180804 A1 20060817
DOCDB simple family (application)
DE 2004000121 W 20040127; CN 200480003232 A 20040127; EP 04705375 A 20040127; JP 2006501475 A 20040127; KR 20057014141 A 20040127; KR 20117001430 A 20040127; TW 93101964 A 20040129; US 54415904 A 20040127