Global Patent Index - EP 1595280 B8

EP 1595280 B8 20070228 - Buffer structure for heteroepitaxy on a silicon substrate

Title (en)

Buffer structure for heteroepitaxy on a silicon substrate

Title (de)

Pufferstruktur für Heteroepitaxie auf einem siliziumsubstrat

Title (fr)

Structure tampon pour hétéroépitaxie sur un substrat de silicium

Publication

EP 1595280 B8 20070228 (EN)

Application

EP 04711402 A 20040216

Priority

  • GB 2004000560 W 20040216
  • GB 0303784 A 20030219

Abstract (en)

[origin: GB2398672A] Graded compositions of Group IIIA (eg La, Y, Sc, Ac) nitride alloys are used as buffer layers between silicon substrates or layers and epitaxial layers of gallium nitride, perovskites, or ferroelectric materials. The buffer layer has a lattice constant which varies between the underlying silicon layer and the overlying epitaxial layer.

IPC 8 full level

H01L 21/20 (2006.01); C30B 23/02 (2006.01); C30B 29/38 (2006.01)

CPC (source: EP)

C30B 23/02 (2013.01); C30B 29/403 (2013.01); C30B 29/406 (2013.01); H01L 21/02381 (2013.01); H01L 21/02439 (2013.01); H01L 21/02505 (2013.01); H01L 21/0251 (2013.01); H01L 21/0254 (2013.01)

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GR HU IE IT LI LU MC NL PT RO SE SI SK TR

DOCDB simple family (publication)

GB 0303784 D0 20030326; GB 2398672 A 20040825; AT 349774 T 20070115; CN 100382244 C 20080416; CN 1751379 A 20060322; DE 602004003910 D1 20070208; DE 602004003910 T2 20070516; EP 1595280 A2 20051116; EP 1595280 B1 20061227; EP 1595280 B8 20070228; GB 0515760 D0 20050907; GB 2413898 A 20051109; GB 2413898 B 20060816; JP 2006518104 A 20060803; JP 4493646 B2 20100630; US 2006145186 A1 20060706; US 7323764 B2 20080129; WO 2004075249 A2 20040902; WO 2004075249 A3 20041028

DOCDB simple family (application)

GB 0303784 A 20030219; AT 04711402 T 20040216; CN 200480004678 A 20040216; DE 602004003910 T 20040216; EP 04711402 A 20040216; GB 0515760 A 20040216; GB 2004000560 W 20040216; JP 2006502270 A 20040216; US 54591105 A 20050817