EP 1595285 A1 20051116 - SOI CONTACT STRUCTURE(S) AND CORRESPONDING PRODUCTION METHOD
Title (en)
SOI CONTACT STRUCTURE(S) AND CORRESPONDING PRODUCTION METHOD
Title (de)
SOI KONTAKTSTRUKTUR(EN) UND ZUGEHÖRIGES HERSTELLUNGSVERFAHREN
Title (fr)
STRUCTURE(S) DE CONTACT DE TYPE SILICIUM SUR ISOLANT (SOI) ET PROCEDE DE PRODUCTION CORRESPONDANT
Publication
Application
Priority
- DE 2004000146 W 20040130
- DE 10303643 A 20030130
Abstract (en)
[origin: WO2004068574A1] Disclosed are an arrangement and a production method for electrically connecting active semiconductor structures in or on a monocrystalline silicon layer (12) located on the front face (V) of silicon-on-insulator semiconductor wafers (SOI, 10) to the substrate (13). The electrical connection (20) is made through an insulator layer (11). A stack of layers (30 to 32, 70 to 72) is disposed above the connection piece (20) on the insulator layer (11).
IPC 1-7
IPC 8 full level
H01L 21/74 (2006.01)
CPC (source: EP US)
H01L 21/743 (2013.01 - EP US)
Citation (search report)
See references of WO 2004068574A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2004068574 A1 20040812; EP 1595285 A1 20051116; US 2006160339 A1 20060720; US 7485926 B2 20090203
DOCDB simple family (application)
DE 2004000146 W 20040130; EP 04706605 A 20040130; US 54389605 A 20050729