EP 1597759 A1 20051123 - RELAXATION OF A THIN LAYER AT A HIGH TEMPERATURE AFTER ITS TRANSFER
Title (en)
RELAXATION OF A THIN LAYER AT A HIGH TEMPERATURE AFTER ITS TRANSFER
Title (de)
RELAXATION EINER DÜNNSCHICHT BEI EINER HOHEN TEMPERATUR NACH IHREM TRANSFER
Title (fr)
RELAXATION D'UNE COUCHE MINCE A UNE TEMPERATURE ELEVEE APRES SON TRANSFERT
Publication
Application
Priority
- IB 2004000931 W 20040301
- FR 0302519 A 20030228
Abstract (en)
[origin: WO2004077553A1] The invention relates to a method for forming a relaxed or pseudo-relaxed layer on a substrate, the relaxed layer being in a material selected from among semiconductor materials, comprising the following steps: a) growing on a donor substrate (1) an elastically strained layer (2) constituted by at least a material chosen from among the semiconductor materials; b) forming on the strained layer (2), or on a receiver substrate (7), a vitreous layer (4) made of a material which is viscous above a viscosity temperature of more than about 900°C; c) bonding the receiver substrate (7) to the strained layer (2) by means of the vitreous layer (4) formed in step (b); d) removing the donor substrate (1), so as to form a structure (20) comprising the receiver substrate, the vitreous layer (4) and the strained layer (2); e) thermal treating the structure at a temperature close to or above the viscosity temperature, so as to relax at least a part of the constraints in the strained layer (2).
IPC 1-7
IPC 8 full level
H01L 21/762 (2006.01)
CPC (source: EP)
H01L 21/76254 (2013.01); H01L 21/76259 (2013.01)
Citation (search report)
See references of WO 2004077553A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
FR 2851848 A1 20040903; FR 2851848 B1 20050708; EP 1597759 A1 20051123; JP 2006519489 A 20060824; WO 2004077553 A1 20040910
DOCDB simple family (application)
FR 0302519 A 20030228; EP 04715982 A 20040301; IB 2004000931 W 20040301; JP 2006502499 A 20040301