EP 1597770 A1 20051123 - BIPOLAR TRANSISTOR WITH AN IMPROVED BASE EMITTER JUNCTION AND METHOD FOR THE PRODUCTION THEREOF
Title (en)
BIPOLAR TRANSISTOR WITH AN IMPROVED BASE EMITTER JUNCTION AND METHOD FOR THE PRODUCTION THEREOF
Title (de)
BIPOLARTRANSISTOR MIT VERBESSERTEM BASIS-EMITTER- BERGANG UND VERFAHREN ZUR HERSTELLUNG
Title (fr)
TRANSISTOR BIPOLAIRE A JONCTION BASE-EMETTEUR AMELIOREE ET PROCEDE DE PRODUCTION
Publication
Application
Priority
- EP 0314339 W 20031216
- DE 10308870 A 20030228
Abstract (en)
[origin: WO2004077571A1] The invention relates to an improved bipolar transistor comprising a substrate, a collector (K) embodied in the substrate, a monocrystalline base embodied in a base layer (BS) which is arranged above the collector and a monocrystalline emitter layer (ES) which is arranged above the base. According to the invention, the structure of the emitter layer is improved with the aid of an intermediate layer (ZS) which is arranged between the emitter layer and the base and which is embodied as an etching stop layer. Preferably, an epitiaxially formed silicon carbide layer, which can be selectively etched against silicon, is used.
IPC 1-7
IPC 8 full level
H01L 29/08 (2006.01); H01L 29/732 (2006.01); H01L 29/24 (2006.01)
CPC (source: EP US)
H01L 29/0804 (2013.01 - EP US); H01L 29/165 (2013.01 - EP US); H01L 29/732 (2013.01 - EP US); H01L 29/7378 (2013.01 - EP US); H01L 21/26586 (2013.01 - EP US); H01L 29/1608 (2013.01 - EP US)
Citation (search report)
See references of WO 2004077571A1
Citation (examination)
- FR 2693840 A1 19940121 - THOMSON CSF [FR]
- EP 0510374 A1 19921028 - MATSUSHITA ELECTRIC IND CO LTD [JP]
- US 6043130 A 20000328 - GREGORY HAYDN JAMES [US]
- ZHANG G ET AL: "A comparison of npn and pnp profile design tradeoffs for complementary SiGe HBT Technology", SOLID STATE ELECTRONICS, ELSEVIER SCIENCE PUBLISHERS, BARKING, GB, vol. 44, no. 11, 1 November 2000 (2000-11-01), pages 1949 - 1954, XP004219506, ISSN: 0038-1101, DOI: 10.1016/S0038-1101(00)00165-9
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2004077571 A1 20040910; AU 2003294869 A1 20040917; DE 10308870 A1 20040916; DE 10308870 B4 20060727; EP 1597770 A1 20051123; JP 2006514435 A 20060427; JP 4414895 B2 20100210; US 2006060942 A1 20060323; US 7319251 B2 20080115
DOCDB simple family (application)
EP 0314339 W 20031216; AU 2003294869 A 20031216; DE 10308870 A 20030228; EP 03785841 A 20031216; JP 2004568668 A 20031216; US 54705903 A 20031216