Global Patent Index - EP 1597771 A2

EP 1597771 A2 20051123 - SEMICONDUCTOR DIODE, ELECTRONIC COMPONENT, VOLTAGE SOURCE INVERTER AND CONTROL METHOD

Title (en)

SEMICONDUCTOR DIODE, ELECTRONIC COMPONENT, VOLTAGE SOURCE INVERTER AND CONTROL METHOD

Title (de)

HALBLEITERDIODE, ELEKTRONISCHES BAUTEIL, SPANNUNGSZWISCHENKREISUMRICHTER UND STEUERVERFAHREN

Title (fr)

DIODE A SEMI-CONDUCTEUR, COMPOSANT ELECTRONIQUE, CONVERTISSEUR DE CIRCUIT DE TENSION INTERMEDIAIRE ET PROCEDE DE COMMANDE

Publication

EP 1597771 A2 20051123 (DE)

Application

EP 04712009 A 20040218

Priority

  • EP 2004001541 W 20040218
  • DE 10308313 A 20030226

Abstract (en)

[origin: WO2004077573A2] The invention relates to a semiconductor diode, an electronic component and to a voltage source inverter. According to the invention, the semiconductor diode having at least one pn-transition can be switched between a first state and a second state. In comparison to the first state, the second state has a greater on-state resistance and a smaller accumulated charge, and the pn-transition is capable of blocking both in the first state as well as in the second state with at least one predetermined blocking ability. An MOS-controlled diode is hereby obtained in which the transition from the on-state to the blocking state is simplified and is thus not critical with regard to the temporal sequence of the control pulses.

IPC 1-7

H01L 29/739; H02M 5/458

IPC 8 full level

H01L 29/36 (2006.01); H01L 29/739 (2006.01)

CPC (source: EP US)

H01L 29/36 (2013.01 - EP US); H01L 29/7391 (2013.01 - EP US); H01L 2924/0002 (2013.01 - EP US)

Citation (search report)

See references of WO 2004077573A2

Designated contracting state (EPC)

AT DE FR GB IT

DOCDB simple family (publication)

WO 2004077573 A2 20040910; WO 2004077573 A3 20041223; CN 100483736 C 20090429; CN 1754263 A 20060329; DE 10308313 A1 20040916; DE 10308313 B4 20100819; EP 1597771 A2 20051123; JP 2006519485 A 20060824; US 2006071280 A1 20060406; US 7582939 B2 20090901

DOCDB simple family (application)

EP 2004001541 W 20040218; CN 200480005203 A 20040218; DE 10308313 A 20030226; EP 04712009 A 20040218; JP 2006501876 A 20040218; US 54717504 A 20040218