EP 1602128 B1 20160817 - SURFACE-COATING METHOD, PRODUCTION OF MICROELECTRONIC INTERCONNECTIONS USING SAID METHOD AND INTEGRATED CIRCUITS
Title (en)
SURFACE-COATING METHOD, PRODUCTION OF MICROELECTRONIC INTERCONNECTIONS USING SAID METHOD AND INTEGRATED CIRCUITS
Title (de)
OBERFLÄCHENBESCHICHTUNGSVERFAHREN, HERSTELLUNG VON MIKROELEKTRONISCHEN VERBINDUNGEN DURCH DAS VERFAHREN UND INTEGRIERTE SCHALTUNGEN
Title (fr)
PROCEDE DE REVETEMENT D UNE SURFACE, FABRICATION D'INTERCONNEXIONS EN MICROELECTRONIQUE UTILISANT CE PROCEDE, ET CIRCUITS INTEGRES
Publication
Application
Priority
- FR 2004050057 W 20040213
- FR 0301873 A 20030217
Abstract (en)
[origin: FR2851258A1] Substrate is coated with a nucleating film (X) of metal, where the surface is an electrical (semi)conductor and has cavities and/or projections. Coating a surface of a substrate comprises: (a) depositing, on the surface, an adherent organic film (F) of a thickness so the free face of F follows the contours of the surface; (b) inserting within the organic film a precursor (P) of a metal, at the same time as, or after, step (a); and (c) transforming the precursor to a metal, inserted within , so that the metal also conforms to the contours of the cavities/projections, so forming the nucleating film, within the organic film. Independent claims are also included for: (i) method for preparing interconnections of a microelectronic circuit that includes deposition of (X) by the new process; (ii) integrated circuits and electronic microsystems prepared; (iii) integrated circuits and electronic microsystems that include an (X) prepared by the new method; and (iv) method for galvanizing the surface of a (semi)conductor comprising applying (X) by the new process then galvanic deposition of a metal film, from (X).
IPC 8 full level
C23C 18/16 (2006.01); C23C 18/18 (2006.01); C23C 18/28 (2006.01); H01L 21/48 (2006.01); H01L 21/768 (2006.01); H05K 3/10 (2006.01); H05K 3/18 (2006.01); H05K 3/24 (2006.01); H05K 3/38 (2006.01); H05K 3/42 (2006.01)
CPC (source: EP KR US)
C23C 18/1608 (2013.01 - EP US); C23C 18/1653 (2013.01 - EP US); C23C 18/1893 (2013.01 - EP US); C23C 18/2086 (2013.01 - EP US); H01L 21/48 (2013.01 - KR); H01L 21/76843 (2013.01 - EP US); H01L 21/7685 (2013.01 - EP US); H01L 21/76867 (2013.01 - EP US); H01L 21/76873 (2013.01 - EP US); H01L 21/76874 (2013.01 - EP US); H05K 3/18 (2013.01 - KR); H05K 3/24 (2013.01 - KR); H05K 3/422 (2013.01 - EP US)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR
DOCDB simple family (publication)
FR 2851258 A1 20040820; FR 2851258 B1 20070330; CN 100454501 C 20090121; CN 1813345 A 20060802; EP 1602128 A2 20051207; EP 1602128 B1 20160817; JP 2006518103 A 20060803; JP 5235302 B2 20130710; KR 101127622 B1 20120323; KR 20050112083 A 20051129; US 2006211236 A1 20060921; WO 2004075248 A2 20040902; WO 2004075248 A3 20050407
DOCDB simple family (application)
FR 0301873 A 20030217; CN 200480010269 A 20040213; EP 04710910 A 20040213; FR 2004050057 W 20040213; JP 2006502177 A 20040213; KR 20057015060 A 20040213; US 54465105 A 20050805