EP 1607989 A2 20051221 - Ceramic electronic device and the production method
Title (en)
Ceramic electronic device and the production method
Title (de)
Keramisches Elektronikbauteil und dessen Herstellungsverfahren
Title (fr)
Dispositif électronique céramique et sa méthode de fabrication
Publication
Application
Priority
JP 2004180978 A 20040618
Abstract (en)
A ceramic electronic device having a dielectric layer, wherein the dielectric layer includes a main component containing a (Ba, Ca) (Ti, Zr)O 3 based material and a subcomponent containing an oxide of Si; and a content of the Si oxide is 0 to 0.4 wt% (note that 0 is not included) with respect to the entire dielectric layer; and preferably the dielectric layer has a segregation phase; and the segregation phase contains an oxide of Si and substantially not containing an oxide of Li; by which it is possible to provide a ceramic electronic device, such as a multilayer ceramic capacitor, having a low IR defect rate (initial insulation resistance defect rate), excellent high temperature load lifetime and high reliability.
IPC 1-7
IPC 8 full level
C04B 35/468 (2006.01); C04B 35/49 (2006.01); H01G 4/12 (2006.01); H01G 4/30 (2006.01); H01L 21/31 (2006.01); H01L 21/469 (2006.01); H01L 23/58 (2006.01)
CPC (source: EP KR US)
C04B 35/49 (2013.01 - EP US); C04B 35/64 (2013.01 - EP US); H01G 4/12 (2013.01 - KR); H01G 4/1227 (2013.01 - EP US); H01G 4/232 (2013.01 - KR); H01G 4/30 (2013.01 - EP US); B32B 2311/22 (2013.01 - EP US); C04B 2235/3203 (2013.01 - EP US); C04B 2235/3206 (2013.01 - EP US); C04B 2235/3208 (2013.01 - EP US); C04B 2235/3215 (2013.01 - EP US); C04B 2235/3225 (2013.01 - EP US); C04B 2235/3239 (2013.01 - EP US); C04B 2235/3258 (2013.01 - EP US); C04B 2235/3262 (2013.01 - EP US); C04B 2235/3418 (2013.01 - EP US); C04B 2235/5436 (2013.01 - EP US); C04B 2235/5445 (2013.01 - EP US); C04B 2235/5481 (2013.01 - EP US); C04B 2235/652 (2013.01 - EP US); C04B 2235/6582 (2013.01 - EP US); C04B 2235/6584 (2013.01 - EP US); C04B 2235/6588 (2013.01 - EP US); C04B 2235/663 (2013.01 - EP US); C04B 2235/72 (2013.01 - EP US); C04B 2237/346 (2013.01 - EP US); C04B 2237/348 (2013.01 - EP US); C04B 2237/405 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR GB NL
Designated extension state (EPC)
AL BA HR LV MK YU
DOCDB simple family (publication)
EP 1607989 A2 20051221; EP 1607989 A3 20080604; CN 100511506 C 20090708; CN 1710679 A 20051221; JP 2006005222 A 20060105; KR 100758091 B1 20070911; KR 20060048406 A 20060518; TW 200609964 A 20060316; TW I270091 B 20070101; US 2005282403 A1 20051222; US 7538057 B2 20090526
DOCDB simple family (application)
EP 05013002 A 20050616; CN 200510087852 A 20050617; JP 2004180978 A 20040618; KR 20050052140 A 20050617; TW 94119819 A 20050615; US 15022605 A 20050613