EP 1614655 A1 20060111 - Hard coating and its production method
Title (en)
Hard coating and its production method
Title (de)
Hartbeschichtung und Herstellungsverfahren dazu
Title (fr)
Revêtement dur et son procédé de fabrication
Publication
Application
Priority
- JP 2004181342 A 20040618
- JP 2005171022 A 20050610
Abstract (en)
A hard coating formed by a physical vapor deposition method, comprising metal elements comprising Si and at least one selected from the group consisting of transition metal elements of Groups 4a, 5a and 6a in the Periodic Table, A1 and B, and at least one non-metal element selected from the group consisting of C, N and O, the hard coating having a columnar structure comprising a multi-layer structure composed of pluralities of layers with Si content differences, crystal lattice stripes being continuous in the interlayer boundary regions, and each layer having a thickness of 0.1-100 nm.
IPC 8 full level
B32B 9/00 (2006.01); B82Y 30/00 (2011.01); C23C 14/06 (2006.01); C23C 30/00 (2006.01)
CPC (source: EP KR US)
B82Y 30/00 (2013.01 - EP US); C23C 14/00 (2013.01 - KR); C23C 14/06 (2013.01 - EP US); C23C 30/005 (2013.01 - EP US); Y10T 428/24975 (2015.01 - EP US); Y10T 428/265 (2015.01 - EP US)
Citation (applicant)
- EP 0709483 A2 19960501 - SUMITOMO ELECTRIC INDUSTRIES [JP]
- US 2001008707 A1 20010719 - EERDEN MICHIEL J J [NL], et al
- I.-W. PARK ET AL.: "Effects of Si addition on the microstructural evolution and hardness of Ti-Al-Si-N films prepared by the hybrid system of arc ion plating and sputtering techniques", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A, AMERICAN INSTITUTE OF PHYSICS, NEW YORK, NY, US, vol. 21, July 2003 (2003-07-01), pages 895 - 899, XP012006489, DOI: doi:10.1116/1.1576765
Citation (search report)
- [X] EP 0709483 A2 19960501 - SUMITOMO ELECTRIC INDUSTRIES [JP]
- [X] US 2001008707 A1 20010719 - EERDEN MICHIEL J J [NL], et al
- [XA] PARK IN-WOOK ET AL: "Effects of Si addition on the microstructural evolution and hardness of Ti-Al-Si-N films prepared by the hybrid system of arc ion plating and sputtering techniques", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A. VACUUM, SURFACES AND FILMS, AMERICAN INSTITUTE OF PHYSICS, NEW YORK, NY, US, vol. 21, no. 4, July 2003 (2003-07-01), pages 895 - 899, XP012006489, ISSN: 0734-2101
- [A] PATENT ABSTRACTS OF JAPAN vol. 018, no. 302 (M - 1618) 9 June 1994 (1994-06-09)
- [A] LATTEMANN M ET AL: "Characterisation of silicon carbide and silicon nitride thin films and Si3N4/SiC multilayers", DIAMOND AND RELATED MATERIALS, ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, NL, vol. 11, no. 3-6, March 2002 (2002-03-01), pages 1248 - 1253, XP004357113, ISSN: 0925-9635
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
EP 1614655 A1 20060111; EP 1614655 B1 20151007; EP 1614655 B2 20180808; KR 101170396 B1 20120801; KR 20060046478 A 20060517; US 2005284747 A1 20051229; US 7354640 B2 20080408
DOCDB simple family (application)
EP 05012678 A 20050613; KR 20050052426 A 20050617; US 15335005 A 20050616