Global Patent Index - EP 1615271 A1

EP 1615271 A1 20060111 - Method of straining a thin film pattern

Title (en)

Method of straining a thin film pattern

Title (de)

Verfahren zum Verspannen einer Dünnschichtstruktur

Title (fr)

Procédé pour contraindre un motif mince

Publication

EP 1615271 A1 20060111 (FR)

Application

EP 05106047 A 20050704

Priority

FR 0451440 A 20040705

Abstract (en)

The method involves etching a pre-strain layer (20) of an initial substrate only on a portion of its thickness. The substrate has several layers (26-i) interleaved between a thin semiconductor layer (24) and the pre-strain layer. The sum of the thicknesses of the interleaved layers (26-i) and the thickness of the layer (24) is less in front of the etched thickness of the layer (20).

IPC 8 full level

H01L 29/78 (2006.01)

CPC (source: EP US)

H01L 29/66772 (2013.01 - EP US); H01L 29/7849 (2013.01 - EP US); H01L 21/76275 (2013.01 - EP US); H01L 21/76289 (2013.01 - EP US); H01L 29/6659 (2013.01 - EP US); H01L 29/78654 (2013.01 - EP US)

Citation (search report)

  • [X] EP 1231643 A2 20020814 - UNIV TOHOKU [JP]
  • [X] US 2003155592 A1 20030821 - SHIMA MASASHI [JP], et al
  • [A] US 5532510 A 19960702 - AMORAI-MORIYA NETZER [US], et al
  • [DA] US 6563152 B2 20030513 - ROBERDS BRIAN [US], et al
  • [PX] US 2005106792 A1 20050519 - CEA STEPHEN M [US], et al
  • [DA] RAYSSAC O ET AL: "From SOI to SOIM technology: Application for specific semiconductor processes", SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES X. PROCEEDINGS OF THE TENTH INTERNATIONAL SYMPOSIUM (ELECTROCHEMICAL SOCIETY PROCEEDINGS VOL.2001-3) ELECTROCHEM. SOC PENNINGTON, NJ, USA, 2001, pages 39 - 44, XP008043050, ISBN: 1-56677-309-1
  • [A] RIM K ET AL: "Fabrication and mobility characteristics of ultra-thin strained si directly on insulator (SSDOI) MOSFETs", INTERNATIONAL ELECTRON DEVICES MEETING 2003. IEDM. TECHNICAL DIGEST. WASHINGTON, DC, DEC 8 - 10, 2003, NEW YORK, NY : IEEE, US, 8 December 2003 (2003-12-08), pages 49 - 52, XP010683956, ISBN: 0-7803-7872-5

Designated contracting state (EPC)

DE FR GB IT

DOCDB simple family (publication)

EP 1615271 A1 20060111; EP 1615271 B1 20100623; DE 602005021938 D1 20100805; FR 2872626 A1 20060106; FR 2872626 B1 20080502; US 2006091105 A1 20060504; US 8343780 B2 20130101

DOCDB simple family (application)

EP 05106047 A 20050704; DE 602005021938 T 20050704; FR 0451440 A 20040705; US 17294505 A 20050705