EP 1618612 A1 20060125 - SINTERED SEMICONDUCTOR MATERIAL
Title (en)
SINTERED SEMICONDUCTOR MATERIAL
Title (de)
GESINTERTES HALBLEITERMATERIAL
Title (fr)
MATERIAU SEMICONDUCTEUR OBTENU PAR FRITTAGE
Publication
Application
Priority
- FR 2004050151 W 20040409
- FR 0304676 A 20030414
Abstract (en)
[origin: WO2004093202A1] The invention relates to a method for forming a semiconductor material obtained by sintering powders and to a semiconductor material. The method comprises a compression and heat treatment stage such that one part of the powder is melted or becomes viscous. The material can be used in the photovoltaic field.
IPC 1-7
IPC 8 full level
H01L 31/0236 (2006.01); H01L 31/18 (2006.01)
CPC (source: EP US)
H01L 31/02363 (2013.01 - EP US); H01L 31/1804 (2013.01 - EP US); Y02E 10/547 (2013.01 - EP US); Y02P 70/50 (2015.11 - EP US)
Citation (search report)
See references of WO 2004093202A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2004093202 A1 20041028; EP 1618612 A1 20060125; JP 2006523021 A 20061005; JP 4869061 B2 20120201; US 2007178675 A1 20070802; US 8105923 B2 20120131
DOCDB simple family (application)
FR 2004050151 W 20040409; EP 04742838 A 20040409; JP 2006505871 A 20040409; US 55254804 A 20040409