EP 1625628 A2 20060215 - METHOD FOR PRODUCING TRANSPARENT P-CONDUCTIVE CuAlO2
Title (en)
METHOD FOR PRODUCING TRANSPARENT P-CONDUCTIVE CuAlO2
Title (de)
VERFAHREN ZUR HERSTELLUNG VON TRANSPARENTEM P-LEITENDEN CuAlO2
Title (fr)
PROCEDE DE PREPARATION DE CuAlO2 TRANSPARENT CONDUCTEUR DE TYPE P
Publication
Application
Priority
- DE 2004001069 W 20040518
- DE 10323625 A 20030521
Abstract (en)
[origin: WO2004106593A2] Transparent conductive materials are used for optoelectronic applications. However, the materials presently used are n-type semiconductors. Transparent p-type semiconductors are also required to produce pn transitions. Only a few such materials are known, but their long-term stability is questionable. Oxides would provide better stability for said application, but the structural conditions, under which they can be p-conductive are extremely restrictive. The synthesis of CuAlO2 is complicated by the formation of binary oxides, spinell-type CuAl2O4 or metallic copper. At present, to produce pulverulent, pure CuAlO2, binary oxides are reacted at temperatures of at least 1000 <°>C for at least 20 hours, with interruptions for renewed mixing and compression. The aim of the invention is to provide a method for producing transparent, p-conductive CuAlO2, without producing undesirable companion products, in particular for optoelectronic applications, said method facilitating the cost-effective production of pulverulent CuAlO2 with long-term stability. In said production method for transparent, p-conductive CuAlO2, an exchange reaction consistent with the crystalline structure takes place. The alpha modifications of the non-conductive, ceramic-type material LiAlO2 and CuCl then take part in a metathesis reaction by ion exchange, at a temperature in excess of approximately 330 °C, to form the desired crystalline structure of CuAlO2 and LiCl that can be washed out. The inventive method is suitable for the production of transparent p-conductive CuAlO2 for various optoelectronic applications, in particular large flat screens and thin-film solar cells.
IPC 1-7
H01L 33/00; C30B 23/02; C30B 29/20; C23C 14/00; C23C 14/08; C01G 3/00; C01G 3/02; C01F 7/02
IPC 8 full level
C01D 15/04 (2006.01); C01G 3/00 (2006.01); C23C 14/08 (2006.01)
CPC (source: EP)
C01D 15/04 (2013.01); C01G 3/00 (2013.01); C23C 14/08 (2013.01); H01L 31/022466 (2013.01); H01L 31/0322 (2013.01); C01P 2002/76 (2013.01); C01P 2006/40 (2013.01); H10K 30/82 (2023.02); H10K 2102/101 (2023.02); Y02E 10/541 (2013.01); Y02P 70/50 (2015.11)
Citation (search report)
See references of WO 2004106593A2
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2004106593 A2 20041209; WO 2004106593 A3 20050217; DE 10323625 B3 20050105; EP 1625628 A2 20060215
DOCDB simple family (application)
DE 2004001069 W 20040518; DE 10323625 A 20030521; EP 04738539 A 20040518