EP 1629270 A2 20060301 - PARAMETERISED SEMICONDUCTOR STRUCTURE COMPRISING INTEGRATED DOPING CHANNELS, METHOD FOR PRODUCING SAID STRUCTURE AND USE THEREOF
Title (en)
PARAMETERISED SEMICONDUCTOR STRUCTURE COMPRISING INTEGRATED DOPING CHANNELS, METHOD FOR PRODUCING SAID STRUCTURE AND USE THEREOF
Title (de)
HALBLEITERSTRUKTUR MIT INTEGRIERTEN DOTIERUNGSKANÄLEN.
Title (fr)
STRUCTURE COMPOSITE A SEMI-CONDUCTEUR PARAMETREE COMPRENANT DES CANAUX DE DOPAGE INTEGRES, PROCEDE POUR LA PRODUIRE ET SON UTILISATION
Publication
Application
Priority
- DE 2004001070 W 20040518
- DE 10325150 A 20030531
Abstract (en)
[origin: WO2004109807A2] Known parameterised semiconductor composite structures operate in a monofunctional manner. To obtain the greatest degree of flexibility and maximise its universal applicability, the inventive parameterised semiconductor composite structure (TEMPOS) has nanoscalar pores (VP) acting as doping channels and a high-ohmic coating of electrically conductive material (ECM), which also extends between the pores (VP), on the surface of the layer (EIL) that consists of an electrically insulating material. An electric resistance is generated, said resistance supporting the vertical migration of additional charge carriers into the semiconductor composite structure (PSC) but preventing horizontal migration between the equilateral electrodes (o, w). Fundamental parameters for regulating the function of the semiconductor composite structure (TEMPOS), which can also comprise a differentially negative resistance behaviour (NERPOS), relate to the configuration of the pores (VP) and the electrically conductive material (ECM). Preferably, the pores (VP) can be created by ion irradiation and subsequent etching, the etching duration determining the pore depth and pore diameter. The conductive material (ECM) preferably consists of conductive nanoclusters (DNP) or moisture-sensitive fullerenes (MOSBIT). Areas of application for the invention include electronic, optoelectronic, hygroscopic electronic and sensory semiconductor components with active and passive, thermal, resistive, capacitive, frequency-dependent, chemical and/or radiation-resistant behaviour and an analogue or digital configuration.
IPC 1-7
IPC 8 full level
G01N 27/00 (2006.01); G01N 27/12 (2006.01); H01L 29/772 (2006.01); H01L 29/86 (2006.01); H01L 31/10 (2006.01); G01N 27/414 (2006.01); H01L 21/316 (2006.01); H10K 99/00 (2023.01)
CPC (source: EP KR US)
B82Y 10/00 (2013.01 - EP); G01N 27/129 (2013.01 - EP KR); H01L 21/02115 (2013.01 - KR); H01L 21/02118 (2013.01 - KR); H01L 21/02178 (2013.01 - EP KR US); H01L 21/02203 (2013.01 - EP KR US); H01L 21/02258 (2013.01 - EP KR US); H01L 29/1025 (2013.01 - KR); H01L 29/772 (2013.01 - EP KR); H01L 29/86 (2013.01 - EP KR); H10K 10/46 (2023.02 - EP KR); H10K 30/65 (2023.02 - EP KR); H10K 85/211 (2023.02 - KR); H10K 85/311 (2023.02 - KR); B82Y 10/00 (2013.01 - KR); H01L 21/02115 (2013.01 - EP US); H01L 21/02118 (2013.01 - EP US); H01L 21/0214 (2013.01 - EP US); H10K 85/211 (2023.02 - EP); H10K 85/311 (2023.02 - EP); Y02E 10/549 (2013.01 - EP KR); Y02P 70/50 (2015.11 - EP)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2004109807 A2 20041216; WO 2004109807 A3 20050210; CN 1802758 A 20060712; DE 10325150 A1 20041230; EP 1629270 A2 20060301; JP 2006526279 A 20061116; KR 20060017826 A 20060227
DOCDB simple family (application)
DE 2004001070 W 20040518; CN 200480015110 A 20040518; DE 10325150 A 20030531; EP 04738540 A 20040518; JP 2006508111 A 20040518; KR 20057022827 A 20051129