Global Patent Index - EP 1629526 A1

EP 1629526 A1 20060301 - SUBSTRATE FOR STRESSED SYSTEMS AND METHOD FOR CRYSTAL GROWTH ON SUCH A SUBSTRATE

Title (en)

SUBSTRATE FOR STRESSED SYSTEMS AND METHOD FOR CRYSTAL GROWTH ON SUCH A SUBSTRATE

Title (de)

SUBSTRAT FÜR VERSPANNTE SYSTEME UND VERFAHREN DES KRISTALLWACHSTUMS AUF EINEM SOLCHEN SUBSTRAT

Title (fr)

SUBSTRAT POUR SYSTEMES CONTRAINTS ET PROCEDE DE CROISSANCE CRISTALLINE SUR UN TEL SUBSTRAT

Publication

EP 1629526 A1 20060301 (FR)

Application

EP 04767192 A 20040527

Priority

  • FR 2004001314 W 20040527
  • FR 0306568 A 20030530

Abstract (en)

[origin: US2004241902A1] A stress absorbing microstructure assembly including a support substrate having an accommodation layer that has plurality of motifs engraved or etched in a surface, a buffer layer and a nucleation layer. The stress absorbing microstructure assembly may also include an insulating layer between the buffer layer and the nucleation layer. This assembly can receive thick epitaxial layers thereon with concern of causing cracking of such layers.

IPC 1-7

H01L 21/20; H01L 21/762

IPC 8 full level

B81C 1/00 (2006.01); H01L 21/20 (2006.01); H01L 21/762 (2006.01)

CPC (source: EP KR US)

B81C 1/00365 (2013.01 - EP US); C30B 25/183 (2013.01 - EP US); H01L 21/0237 (2013.01 - EP US); H01L 21/0243 (2013.01 - EP US); H01L 21/02439 (2013.01 - EP US); H01L 21/0245 (2013.01 - EP US); H01L 21/02513 (2013.01 - EP US); H01L 21/02658 (2013.01 - EP US); H01L 21/02664 (2013.01 - EP US); H01L 21/187 (2013.01 - EP US); H01L 21/20 (2013.01 - KR); H01L 21/76254 (2013.01 - EP US); B81C 2201/0191 (2013.01 - EP US)

Citation (search report)

See references of WO 2004109781A1

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PL PT RO SE SI SK TR

DOCDB simple family (publication)

FR 2855650 A1 20041203; FR 2855650 B1 20060303; CN 100492589 C 20090527; CN 1795538 A 20060628; EP 1629526 A1 20060301; JP 2007503726 A 20070222; JP 4714688 B2 20110629; KR 100742322 B1 20070724; KR 20060021864 A 20060308; TW 200509220 A 20050301; TW I337375 B 20110211; US 2004241902 A1 20041202; US 2006076649 A1 20060413; US 2006079070 A1 20060413; US 2006216849 A1 20060928; US 7009270 B2 20060307; US 7145214 B2 20061205; US 7163873 B2 20070116; US 7405135 B2 20080729; WO 2004109781 A1 20041216; WO 2004109781 B1 20050317

DOCDB simple family (application)

FR 0306568 A 20030530; CN 200480014590 A 20040527; EP 04767192 A 20040527; FR 2004001314 W 20040527; JP 2006530387 A 20040527; KR 20057022413 A 20051123; TW 93115427 A 20040528; US 28737105 A 20051128; US 28737905 A 20051128; US 43493006 A 20060517; US 75500704 A 20040108