Global Patent Index - EP 1630873 A4

EP 1630873 A4 20070314 - SOLAR CELL AND PROCESS FOR PRODUCING THE SAME

Title (en)

SOLAR CELL AND PROCESS FOR PRODUCING THE SAME

Title (de)

SOLARZELLE UND PROZESS ZU IHRER HERSTELLUNG

Title (fr)

CELLULE SOLAIRE ET PROCEDE DE FABRICATION DE LADITE CELLULE

Publication

EP 1630873 A4 20070314 (EN)

Application

EP 04724198 A 20040329

Priority

  • JP 2004004405 W 20040329
  • JP 2003131797 A 20030509

Abstract (en)

[origin: EP1630873A1] A solar cell (100) comprising a semiconductor solar cell substrate (66) having a light receiving surface formed on the first major surface and generating photovoltaic power based on the light impinging on the light receiving surface, wherein the light receiving surface of the semiconductor solar cell substrate (66) is coated with a light receiving surface side insulating film (61) composed of an inorganic insulating material where the cationic component principally comprising silicon, and the light receiving surface side insulating film (61) is a low hydrogen content inorganic insulating film containing less than 10 atm% of hydrogen. A solar cell having an insulating film exhibiting excellent passivation effect insusceptible to aging can thereby be provided.

IPC 8 full level

H01L 31/0216 (2006.01); H01L 21/318 (2006.01); H01L 31/0224 (2006.01); H01L 31/04 (2006.01); H01L 31/068 (2012.01); H01L 31/072 (2006.01); H01L 31/18 (2006.01)

CPC (source: EP KR US)

H01L 31/02167 (2013.01 - EP US); H01L 31/04 (2013.01 - KR); H01L 31/068 (2013.01 - EP US); H01L 31/0682 (2013.01 - EP US); H01L 31/18 (2013.01 - KR); H01L 31/1804 (2013.01 - EP US); H01L 31/1868 (2013.01 - EP US); Y02E 10/547 (2013.01 - EP US); Y02P 70/50 (2015.11 - EP US)

Citation (search report)

  • [Y] US 6069094 A 20000530 - MATSUMURA HIDEKI [JP], et al
  • [XY] EP 0325606 B1 19940907 - MOBIL SOLAR ENERGY CORP [US]
  • [Y] JP H0997916 A 19970408 - SHARP KK
  • [Y] US 6225241 B1 20010501 - MIYOSHI YOSUKE [JP]
  • [A] JP 2000216163 A 20000804 - FUJITSU LTD
  • [XY] HOLT J K ET AL: "Hot-wire chemical vapor deposition of high hydrogen content silicon nitride for solar cell passivation and anti-reflection coating applications", PREPARATION AND CHARACTERIZATION, ELSEVIER SEQUOIA, NL, vol. 430, no. 1-2, 22 April 2003 (2003-04-22), pages 37 - 40, XP004427516, ISSN: 0040-6090
  • [Y] MATSUMURA H ET AL: "CAT-CVD PROCESS AND ITS APPLICATION TO PREPARATION OF SI-BASED THINFILMS", AMORPHOUS AND HETEROGENEOUS SILICON THIN FILMS : FUNDAMENTALS TO DEVICES - 1999. SAN FRANCISCO, CA APRIL 5 - 9, 1999, MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS. VOL. 557, WARRENDALE, PA : MRS, US, vol. VOL. 557, 5 September 1999 (1999-09-05), pages 67 - 78, XP000895189, ISBN: 1-55899-464-5
  • [A] HIDEKI MATSUMURA: "SILICON NITRIDE PRODUCED BY CATALYTIC CHEMICAL VAPOR DEPOSITION METHOD", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 66, no. 8, 15 October 1989 (1989-10-15), pages 3612 - 3617, XP000073922, ISSN: 0021-8979
  • [A] HIDEKI MATSUMURA: "LOW TEMPERATURE DEPOSITION OF SILICON NITRIDE BY THE CATALYTIC CHEMICAL VAPOR DEPOSITION METHOD", JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN SOCIETY OF APPLIED PHYSICS, TOKYO, JP, vol. 28, no. 10, PART 1, 1 October 1989 (1989-10-01), pages 2157 - 2161, XP000083671, ISSN: 0021-4922
  • See references of WO 2004100273A1

Citation (examination)

  • LAUINGER THOMAS ET AL: "Optimization and characterization of remote plasma-enhanced chemical vapor deposition silicon nitride for the passivation of p-type crystalline silicon surfaces", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART A, AVS /AIP, MELVILLE, NY., US LNKD- DOI:10.1116/1.581095, vol. 16, no. 2, 1 March 1998 (1998-03-01), pages 530 - 543, XP012003817, ISSN: 0734-2101
  • LENKEIT B ET AL: "HIGH QUALITY SCREEN-PRINTED AND FIRED-THROUGH SILICON NITRIDE REAR CONTACTS FOR BIFACIAL SILICON SOLAR CELLS", 16TH. E.C. PHOTOVOLTAIC SOLAR ENERGY CONFERENCE. GLASCOW, UNITED KINGDOM, MAY 1 - 5, 2000; [PROCEEDINGS OF THE INTERNATIONAL PHOTOVOLTAIC SOLAR ENERGY CONFERENCE], LONDON : JAMES & JAMES LTD, GB, vol. CONF. 16, 1 May 2000 (2000-05-01), pages 1332 - 1335, XP001138888, ISBN: 978-1-902916-18-7
  • MOSCHNER J D ET AL: "Thermo-catalytic deposition of silicon nitride - a new method for excellent silicon surface passivation", CONFERENCE RECORD OF THE IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS INC. US; [IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE],, vol. CONF. 29, 19 May 2002 (2002-05-19), pages 174 - 177, XP010666257, ISBN: 978-0-7803-7471-3, DOI: 10.1109/PVSC.2002.1190484

Designated contracting state (EPC)

DE ES FR NL

DOCDB simple family (publication)

EP 1630873 A1 20060301; EP 1630873 A4 20070314; AU 2004237524 A1 20041118; AU 2004237524 B2 20090917; CN 100530700 C 20090819; CN 1784789 A 20060607; JP 2004335867 A 20041125; JP 4118187 B2 20080716; KR 101058735 B1 20110822; KR 20060064561 A 20060613; US 2007186970 A1 20070816; US 2010173447 A1 20100708; US 8030223 B2 20111004; WO 2004100273 A1 20041118

DOCDB simple family (application)

EP 04724198 A 20040329; AU 2004237524 A 20040329; CN 200480012530 A 20040329; JP 2003131797 A 20030509; JP 2004004405 W 20040329; KR 20057021348 A 20040329; US 55606304 A 20040329; US 65636010 A 20100127