EP 1634398 A4 20080820 - A LIGHT SOURCE CABLE OF LASING THAT IS WAVELENGTH LOCKED BY AN INJECTED LIGHT SIGNAL
Title (en)
A LIGHT SOURCE CABLE OF LASING THAT IS WAVELENGTH LOCKED BY AN INJECTED LIGHT SIGNAL
Title (de)
LICHTQUELLE MIT LASER-FÄHIGKEIT MIT WELLENLÄNGENVERRIEGELUNG DURCH EIN EINGESPEISTES LICHTSIGNAL
Title (fr)
SOURCE LUMINEUSE A CAPACITE LASER, VERROUILLABLE EN LONGUEUR D'ONDE PAR UN SIGNAL LUMINEUX INJECTE
Publication
Application
Priority
US 0317201 W 20030529
Abstract (en)
[origin: WO2004107628A1] Various methods, systems, and apparatuses are described in which a light source (101) capable of lasing is wavelength locked by an injected light signal. The light source (101) capable of lasing, such as a Fabry-Perot laser diode, may have antireflective coating on one or more facets of the light source (101) capable of lasing. The light source (101) capable of lasing receives a spectral slice of a light signal from a broadband light source (113) to wavelength lock the output wavelength of the light source (101) capable of lasing within the bandwidth of the injected light signal. A current pump (141) may bias the light source (101) capable of lasing to operate as a reflective regenerate semiconductor optical amplifier so that the injected light is reflected back out a front facet after being amplified and wavelength locked. The current pump (141) may also bias the light source (101) capable of lasing such that the externally injected narrow-band light signal into the light source (101) capable of lasing suppresses the lasing modes outside of the bandwidth of injected incoherent light.
IPC 8 full level
H04B 10/00 (2006.01); H04J 14/02 (2006.01)
CPC (source: EP)
H04B 10/2587 (2013.01); H04B 10/506 (2013.01); H04J 14/02 (2013.01); H04J 14/0246 (2013.01); H04J 14/025 (2013.01); H04J 14/0282 (2013.01); H04J 14/0226 (2013.01)
Citation (search report)
- [A] US 2001048702 A1 20011206 - YOSHIDA JUNJI [JP], et al
- [X] HYUN DEOK KIM ET AL: "A Low-Cost WDM Source with an ASE Injected Fabry-Perot Semiconductor Laser", IEEE PHOTONICS TECHNOLOGY LETTERS, IEEE SERVICE CENTER, PISCATAWAY, NJ, US, vol. 12, no. 8, 1 August 2000 (2000-08-01), XP011047230, ISSN: 1041-1135
- [A] CHING-FUH LIN ET AL: "Broad-Band Superluminescent Diodes Fabricated on a Substrate with Asymmetric Dual Quantum Wells", IEEE PHOTONICS TECHNOLOGY LETTERS, IEEE SERVICE CENTER, PISCATAWAY, NJ, US, vol. 8, no. 11, 1 November 1996 (1996-11-01), XP011048417, ISSN: 1041-1135
- [A] KLEIN B ET AL: "Multimode lasing at room temperature from InGaAs/GaAs quantum dot lasers", SEMICONDUCTOR LASERS FOR LIGHTWAVE COMMUNICATION SYSTEMS 21-22 AUG. 2001 DENVER, CO, USA, vol. 4533, 2001, Proceedings of the SPIE - The International Society for Optical Engineering SPIE-Int. Soc. Opt. Eng USA, pages 1 - 8, XP008093958, ISSN: 0277-786X
- See references of WO 2004107628A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2004107628 A1 20041209; AU 2003238859 A1 20050121; CN 1802807 A 20060712; CN 1802807 B 20110112; EP 1634398 A1 20060315; EP 1634398 A4 20080820; JP 2006526307 A 20061116
DOCDB simple family (application)
US 0317201 W 20030529; AU 2003238859 A 20030529; CN 03826827 A 20030529; EP 03734316 A 20030529; JP 2005500433 A 20030529