EP 1645551 B1 20130731 - DIELECTRIC CERAMIC COMPOSITION, PROCESS FOR PRODUCING THE SAME, DIELECTRIC CERAMIC EMPLOYING IT AND MULTILAYER CERAMIC COMPONENT
Title (en)
DIELECTRIC CERAMIC COMPOSITION, PROCESS FOR PRODUCING THE SAME, DIELECTRIC CERAMIC EMPLOYING IT AND MULTILAYER CERAMIC COMPONENT
Title (de)
DIELEKTRISCHE KERAMIKZUSAMMENSETZUNG, HERSTELLUNGSVERFAHREN DAFÜR, DIELEKTRISCHE KERAMIK DAMIT UND MEHRSCHICHTIGES KERAMIKBAUTEIL
Title (fr)
COMPOSITION DE CERAMIQUE DIELECTRIQUE, SON PROCEDE DE FABRICATION, CERAMIQUE DIELECTRIQUE CONTENANT CETTE COMPOSITION ET ELEMENT CERAMIQUE MULTICOUCHE
Publication
Application
Priority
- JP 2004006735 W 20040519
- JP 2003142148 A 20030520
- JP 2003142149 A 20030520
Abstract (en)
[origin: EP1645551A1] A dielectric ceramic composition having a relative dielectric constant µ r of 15-25 allowing formation of a laminated ceramic part having an appropriate size, capable of being sintered at a temperature lower than 800-1000°C allowing incorporation and lamination of low resistance conductor of Cu or Ag through simultaneous si f of resonant frequency has an absolute value not larger than 50 ppm/°C. The dielectric ceramic composition contains 3-30 parts by weight of lead-free low melting point glass containing 50 to 75 wt% of ZnO, 5 to 30 wt% of B 2 O 3 , 6 to 15 wt% of SiO 2 , 0.5 to 5 wt% of Al 2 O 3 , and 3 to 10 wt% of BaO, based on 100 parts by weight of major component expressed by a general formula of x'Zn 2 TiO 4 -(1-x'-y')ZnTiO 3 -y'TiO 2 where 0.15<x'<0.8 and 0‰¦y'‰¦0.2
IPC 8 full level
C04B 35/462 (2006.01); C01G 23/00 (2006.01); C03C 8/20 (2006.01); C03C 14/00 (2006.01); H01B 3/12 (2006.01); H01G 4/12 (2006.01); H01G 4/30 (2006.01)
CPC (source: EP KR US)
C01G 23/00 (2013.01 - EP US); C01G 23/003 (2013.01 - EP US); C03C 8/20 (2013.01 - EP US); C03C 14/004 (2013.01 - EP US); C04B 35/46 (2013.01 - KR); C04B 35/462 (2013.01 - EP KR US); H01B 3/12 (2013.01 - KR); H01G 4/12 (2013.01 - KR); H01G 4/1218 (2013.01 - EP US); H01G 4/30 (2013.01 - EP US); B32B 2311/08 (2013.01 - EP US); B32B 2311/12 (2013.01 - EP US); C01P 2002/72 (2013.01 - EP US); C01P 2006/40 (2013.01 - EP US); C04B 2235/3217 (2013.01 - EP US); C04B 2235/3232 (2013.01 - EP US); C04B 2235/3234 (2013.01 - EP US); C04B 2235/3284 (2013.01 - EP US); C04B 2235/365 (2013.01 - EP US); C04B 2235/5445 (2013.01 - EP US); C04B 2235/6025 (2013.01 - EP US); C04B 2235/656 (2013.01 - EP US); C04B 2235/80 (2013.01 - EP US); C04B 2237/346 (2013.01 - EP US); C04B 2237/407 (2013.01 - EP US); C04B 2237/408 (2013.01 - EP US)
Designated contracting state (EPC)
DE FI FR GB
DOCDB simple family (publication)
EP 1645551 A1 20060412; EP 1645551 A4 20090114; EP 1645551 B1 20130731; EP 1645551 B9 20140604; KR 101137272 B1 20120420; KR 20060012632 A 20060208; US 2006234851 A1 20061019; US 7276461 B2 20071002; WO 2004103929 A1 20041202
DOCDB simple family (application)
EP 04733921 A 20040519; JP 2004006735 W 20040519; KR 20057022055 A 20040519; US 55637405 A 20051110