EP 1645855 A4 20100922 - MEASURING METHOD OF INCIDENT LIGHT AND SENSOR HAVING SPECTROSCOPIC MECHANISM EMPLOYING IT
Title (en)
MEASURING METHOD OF INCIDENT LIGHT AND SENSOR HAVING SPECTROSCOPIC MECHANISM EMPLOYING IT
Title (de)
MESSVERFAHREN FÜR EINFALLENDES LICHT UND SENSOR MIT EINEM SPEKTROSKOPISCHEN MECHANISMUS DAMIT
Title (fr)
PROCEDE DE MESURE DE LUMIERE INCIDENTE ET CAPTEUR A MECANISME SPECTROSCOPIQUE UTILISANT CE PROCEDE
Publication
Application
Priority
- JP 2004004210 W 20040325
- JP 2003177425 A 20030623
Abstract (en)
[origin: EP1645855A1] A method for measuring incident light employing a simple semiconductor structure provided with a single electron-capturing section corresponding to incident light, and a sensor having a spectroscopic mechanism employing the same are provided. A spectroscopic sensor includes a semiconductor substrate (1), a first diffusion layer (2) provided on the semiconductor substrate (1), a second diffusion layer (3) provided at a part of the first diffusion layer (2), and an electrode film (7) provided on the first diffusion layer (2) with an insulating film (4) provided therebetween, the electrode film (7) transmitting the incident light and being applied with a gate voltage. In the spectroscopic sensor, the gate voltage is varied, the depth (position) for capturing electrons generated in the first diffusion layer (2) by the incident light is varied so as to correspond to the gate voltage, and a current indicating the quantity of the electrons is measured. Thereby, wavelength and intensity of the incident light are measured.
IPC 8 full level
G01J 3/32 (2006.01); G01J 1/02 (2006.01); G01J 3/30 (2006.01); H01L 27/14 (2006.01); H01L 27/146 (2006.01); H01L 31/10 (2006.01); H01L 31/101 (2006.01); H01L 31/113 (2006.01); H04N 5/335 (2011.01); H04N 5/369 (2011.01); H04N 5/374 (2011.01)
CPC (source: EP KR US)
G01J 3/32 (2013.01 - KR); H01L 27/14645 (2013.01 - EP US); H01L 31/101 (2013.01 - EP US); H01L 31/113 (2013.01 - EP US); H01L 27/14806 (2013.01 - EP US)
Citation (search report)
- [XYI] US 3459944 A 19690805 - TRIEBWASSER SOL
- [Y] DE 3345239 A1 19840614 - OLYMPUS OPTICAL CO [JP]
- [Y] US 4985758 A 19910115 - HASHIMOTO SEIJI [JP]
- [XI] US 4057819 A 19771108 - OWEN ALAN ERNEST, et al
- [A] US 6512547 B1 20030128 - MIIDA TAKASHI [JP]
- [T] GUSMAO M S ET AL: "FIELD-EFFECT TRANSISITORS AS TUNABLE INFRARED DETECTORS", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US LNKD- DOI:10.1063/1.361101, vol. 79, no. 5, 1 March 1996 (1996-03-01), pages 2752 - 2754, XP000593855, ISSN: 0021-8979
- See also references of WO 2004113854A1
Designated contracting state (EPC)
DE
DOCDB simple family (publication)
EP 1645855 A1 20060412; EP 1645855 A4 20100922; EP 1645855 B1 20130619; CN 100565137 C 20091202; CN 1809732 A 20060726; JP 2005010114 A 20050113; JP 4073831 B2 20080409; KR 100783335 B1 20071207; KR 20060023573 A 20060314; US 2006244089 A1 20061102; US 7465915 B2 20081216; WO 2004113854 A1 20041229
DOCDB simple family (application)
EP 04723397 A 20040325; CN 200480017642 A 20040325; JP 2003177425 A 20030623; JP 2004004210 W 20040325; KR 20057024708 A 20051223; US 56195404 A 20040325