Global Patent Index - EP 1647053 A2

EP 1647053 A2 20060419 - METHOD FOR PRODUCING AN ANISOTROPIC CONDUCTIVE FILM

Title (en)

METHOD FOR PRODUCING AN ANISOTROPIC CONDUCTIVE FILM

Title (de)

VERFAHREN ZUR HERSTELLUNG EINES ANISOTROP LEITENDES FILMS

Title (fr)

PROCEDE DE FABRICATION DE FILM CONDUCTEUR ANISOTROPE

Publication

EP 1647053 A2 20060419 (FR)

Application

EP 04767896 A 20040715

Priority

  • FR 2004050335 W 20040715
  • FR 0350352 A 20030718

Abstract (en)

[origin: FR2857780A1] The manufacture of an anisotropic conductor film, called a perforated layer, incorporating a layer of insulating material and some traversing inserts, consists of formation on a substrate with traversing holes; filling the traversing holes to form inserts; the production of a mask covering a first end of the inserts and the engraving of the non-masked part of the end of the inserts to produce pointed ends for the inserts. The manufacture of an anisotropic conductor film, called a perforated layer, incorporating a layer of electrical insulating material and some traversing inserts, consists of: (a) formation on a substrate of at least one layer of material with traversing holes; (b) filling the traversing holes to form the inserts; and (c) production of a mask partially covering a first end of the inserts and the engraving of the non-masked part of the end of the inserts to produce pointed ends for the inserts. Independent claims are also included for the following: (a) the fabrication of a semiconductor chip including the formation of the anisotropic conductor film on a semiconductor slice; and (b) a semiconductor chip fabricated by this method.

IPC 1-7

H01L 21/60

IPC 8 full level

G03F 7/00 (2006.01); H01L 21/60 (2006.01); H01L 21/68 (2006.01)

CPC (source: EP US)

H01L 21/6835 (2013.01 - EP US); H01L 24/11 (2013.01 - EP US); H01L 2224/13099 (2013.01 - EP US); H01L 2224/16 (2013.01 - EP US); H01L 2224/83101 (2013.01 - EP US); H01L 2924/01005 (2013.01 - EP US); H01L 2924/01006 (2013.01 - EP US); H01L 2924/01013 (2013.01 - EP US); H01L 2924/01022 (2013.01 - EP US); H01L 2924/01023 (2013.01 - EP US); H01L 2924/01024 (2013.01 - EP US); H01L 2924/01029 (2013.01 - EP US); H01L 2924/0103 (2013.01 - EP US); H01L 2924/01047 (2013.01 - EP US); H01L 2924/01057 (2013.01 - EP US); H01L 2924/01058 (2013.01 - EP US); H01L 2924/01061 (2013.01 - EP US); H01L 2924/01073 (2013.01 - EP US); H01L 2924/01074 (2013.01 - EP US); H01L 2924/01078 (2013.01 - EP US); H01L 2924/01079 (2013.01 - EP US); H01L 2924/14 (2013.01 - EP US); H01L 2924/30107 (2013.01 - EP US)

Citation (search report)

See references of WO 2005010926A2

Citation (examination)

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PL PT RO SE SI SK TR

DOCDB simple family (publication)

FR 2857780 A1 20050121; FR 2857780 B1 20050909; EP 1647053 A2 20060419; JP 2007516595 A 20070621; US 2006160270 A1 20060720; US 7510962 B2 20090331; WO 2005010926 A2 20050203; WO 2005010926 A3 20050909

DOCDB simple family (application)

FR 0350352 A 20030718; EP 04767896 A 20040715; FR 2004050335 W 20040715; JP 2006519977 A 20040715; US 56362704 A 20040715