EP 1649506 A1 20060426 - FIELD EFFECT TRANSISTOR HAVING A DOPED GATE ELECTRODE WITH REDUCED GATE DEPLETION AND METHOD OF FORMING THE TRANSISTOR
Title (en)
FIELD EFFECT TRANSISTOR HAVING A DOPED GATE ELECTRODE WITH REDUCED GATE DEPLETION AND METHOD OF FORMING THE TRANSISTOR
Title (de)
FELDEFFEKTTRANSISTOR MIT DOTIERTER GATE-ELEKTRODE MIT VERRINGERTER GATE-VERARMUNG UND VERFAHREN ZUR HERSTELLUNG DES TRANSISTORS
Title (fr)
TRANSISTOR A EFFET DE CHAMP MUNI D'UNE ELECTRODE GACHETTE DOPEE PRESENTANT UNE DEPLETION DE GACHETTE REDUITE ET PROCEDE DE FORMATION DUDIT TRANSISTOR
Publication
Application
Priority
- US 2004017705 W 20040604
- DE 10335103 A 20030731
- US 79085204 A 20040302
Abstract (en)
[origin: WO2005017992A1] By forming an implantation mask (220) prior to the definition of the drain and the source areas (208), an effective decoupling of the gate dopant concentration from that of the drain and source concentrations is achieved. Moreover, after removal of the implantation mask (220), the lateral dimension of the gate electrode (205) may be defined by well-established sidewall spacer (207) techniques, thereby providing a scaling advantage with respect to conventional approaches based on photolithography and anisotropic etching.
IPC 1-7
IPC 8 full level
H01L 21/336 (2006.01); H01L 29/49 (2006.01); H01L 29/786 (2006.01)
CPC (source: EP KR)
H01L 21/18 (2013.01 - KR); H01L 29/4908 (2013.01 - EP); H01L 29/66545 (2013.01 - EP); H01L 29/66553 (2013.01 - EP); H01L 29/66621 (2013.01 - EP); H01L 29/66628 (2013.01 - EP); H01L 29/78618 (2013.01 - EP)
Citation (search report)
See references of WO 2005017992A1
Designated contracting state (EPC)
DE GB
DOCDB simple family (publication)
WO 2005017992 A1 20050224; EP 1649506 A1 20060426; JP 2007500936 A 20070118; KR 101180976 B1 20120907; KR 20060054407 A 20060522
DOCDB simple family (application)
US 2004017705 W 20040604; EP 04754333 A 20040604; JP 2006521819 A 20040604; KR 20067002206 A 20040604