EP 1652230 A2 20060503 - METHOD FOR OBTAINING A THIN HIGH-QUALITY LAYER BY CO-IMPLANTATION AND THERMAL ANNEALING
Title (en)
METHOD FOR OBTAINING A THIN HIGH-QUALITY LAYER BY CO-IMPLANTATION AND THERMAL ANNEALING
Title (de)
VERFAHREN ZUM ERHALTEN EINER QUALITATIV HOCHWERTIGEN DÜNNSCHICHT DURCH COIMPLANTATION UND THERMISCHES AUSHEIZEN
Title (fr)
PROCEDE D' OBTENTION D' UNE COUCHE MINCE DE QUALITE ACCRUE PAR CO-IMPLANTATION ET RECUIT THERMIQUE
Publication
Application
Priority
- FR 2004002038 W 20040729
- FR 0309304 A 20030729
- US 69140303 A 20031021
Abstract (en)
[origin: WO2005013318A2] The invention relates to a method for creating a structure comprising a thin semiconductor material layer on a substrate, comprising the following steps: a species is implanted underneath a surface of a donor substrate wherefrom the thin layer is to be made in order to create an area of embrittlement inside the thickness of the donor substrate; the surface of the donor substrate which underwent implantation is placed in intimate contact with a support substrate; the donor substrate is detached at said area of embrittlement in order to transfer part of the donor substrate onto the support substrate and to form the thin layer thereon. The invention is characterized in that the implementation step involves co-implementation of at least two different atomic species in order to minimize low frequency roughness in the structure obtained after detachment; the method also comprises a finishing step comprising at least one rapid thermal annealing operation in order to minimize high frequency roughness in the structure obtained after detachment.
IPC 1-7
IPC 8 full level
H01L 21/762 (2006.01)
CPC (source: EP KR US)
H01L 21/324 (2013.01 - US); H01L 21/762 (2013.01 - KR); H01L 21/76254 (2013.01 - EP US)
Citation (search report)
See references of WO 2005013318A2
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2005013318 A2 20050210; WO 2005013318 A3 20050324; WO 2005013318 B1 20050519; EP 1652230 A2 20060503; JP 2007500435 A 20070111; KR 20060030911 A 20060411; US 2006223283 A1 20061005; US 2015221545 A1 20150806
DOCDB simple family (application)
FR 2004002038 W 20040729; EP 04786008 A 20040729; JP 2006521623 A 20040729; KR 20067001760 A 20060125; US 201514625407 A 20150218; US 44635706 A 20060605