EP 1654757 A2 20060510 - STRESSED SEMICONDUCTOR-ON-INSULATOR STRUCTURE RESISTANT TO HIGH-TEMPERATURE STRESS
Title (en)
STRESSED SEMICONDUCTOR-ON-INSULATOR STRUCTURE RESISTANT TO HIGH-TEMPERATURE STRESS
Title (de)
GEGENÜBER HOCHTEMPERATURBELASTUNG BESTÄNDIGE GESPANNTE HALBLEITER-AUF-ISOLATOR-STRUKTUR
Title (fr)
STRUCTURE SEMICONDUCTEUR-SUR-ISOLANT CONTRAINTE AYANT UNE TENUE DES CONTRAINTES AUX HAUTES TEMPERATURES
Publication
Application
Priority
- FR 2004002018 W 20040728
- FR 0309377 A 20030730
Abstract (en)
[origin: US2005023610A1] A semiconductor-on-insulator structure for electronics, optics or optoelectronics, in which a semiconductor layer includes desirable elastic constraints. The structure includes a substrate, an insulating layer on the substrate, and a semiconductor layer on the insulating layer. The semiconductor layer has elastic constraints, and the insulating layer is made of an electrically insulating material having a viscosity temperature TG that is sufficiently high so as to protect the semiconductor layer from loss of the elastic constraints when the structure is exposed to a temperature of about 950° C. or more. Also described is a process for producing such a semiconductor-on-insulator structure.
IPC 1-7
IPC 8 full level
H01L 21/762 (2006.01)
CPC (source: EP KR US)
H01L 21/762 (2013.01 - KR); H01L 21/76251 (2013.01 - EP US); H01L 27/12 (2013.01 - KR)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
FR 2858460 A1 20050204; FR 2858460 B1 20051014; CN 1830078 A 20060906; EP 1654757 A2 20060510; JP 2007500434 A 20070111; KR 20060056955 A 20060525; US 2005023610 A1 20050203; WO 2005013317 A2 20050210; WO 2005013317 A3 20050331
DOCDB simple family (application)
FR 0309377 A 20030730; CN 200480021742 A 20040728; EP 04767800 A 20040728; FR 2004002018 W 20040728; JP 2006521618 A 20040728; KR 20067001759 A 20060125; US 70089603 A 20031103