EP 1656694 A4 20091111 - HIGH ASPECT RATIO ETCH USING MODULATION OF RF POWERS OF VARIOUS FREQUENCIES
Title (en)
HIGH ASPECT RATIO ETCH USING MODULATION OF RF POWERS OF VARIOUS FREQUENCIES
Title (de)
ÄTZUNG MIT HOHEM SEITENVERHÄLTNIS DURCH VERWENDUNG EINER MODULATION VON HF-LEISTUNGEN VERSCHIEDENER FREQUENZEN
Title (fr)
GRAVURE A GRAND ALLONGEMENT FAISANT APPEL A LA MODULATION DE PUISSANCES RADIOELECTRIQUES DE DIVERSES FREQUENCES
Publication
Application
Priority
- US 2004025406 W 20040806
- US 64566503 A 20030822
- US 73702203 A 20031215
Abstract (en)
[origin: WO2005022623A1] A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed (404) in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided (408) to the process chamber. A first etch step is provided (412) where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided (416), where the first frequency, the second frequency, and the third frequency are at a different power setting. Optionally, a third etch step may also be provided (420).
IPC 8 full level
H01L 21/00 (2006.01); B23B 3/10 (2006.01); H01J 37/32 (2006.01); H01L 21/306 (2006.01); H01L 21/311 (2006.01); H01L 21/467 (2006.01); H05H 1/46 (2006.01)
CPC (source: EP KR US)
H01J 37/32082 (2013.01 - EP US); H01J 37/32155 (2013.01 - EP US); H01J 37/32165 (2013.01 - EP US); H01L 21/3065 (2013.01 - KR); H01L 21/311 (2013.01 - KR); H01L 21/31116 (2013.01 - EP US); H01L 21/67063 (2013.01 - EP US); H01L 21/67069 (2013.01 - EP US); H01J 2237/3347 (2013.01 - EP US)
Citation (search report)
- [X] US 2003000913 A1 20030102 - HUNG HOIMAN [US], et al
- [XA] US 2003111180 A1 20030619 - NAGAHATA KAZUNORI [JP], et al
- [XA] US 5846885 A 19981208 - KAMATA TAKESHI [JP], et al
- See references of WO 2005022623A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2005022623 A1 20050310; WO 2005022623 B1 20050526; AT E543204 T1 20120215; EP 1656694 A1 20060517; EP 1656694 A4 20091111; EP 1656694 B1 20120125; IL 173861 A0 20060705; IL 173861 A 20101130; IL 205779 A 20110831; JP 2007503709 A 20070222; JP 2011139094 A 20110714; JP 5444277 B2 20140319; KR 101116586 B1 20120315; KR 20060123065 A 20061201; SG 130195 A1 20070320; TW 200509252 A 20050301; TW I346358 B 20110801; US 2006118518 A1 20060608; US 2007012659 A1 20070118; US 7144521 B2 20061205; US 7749353 B2 20100706
DOCDB simple family (application)
US 2004025406 W 20040806; AT 04780271 T 20040806; EP 04780271 A 20040806; IL 17386106 A 20060221; IL 20577910 A 20100513; JP 2006523892 A 20040806; JP 2011065376 A 20110324; KR 20067003677 A 20040806; SG 2007009798 A 20040806; TW 93124223 A 20040812; US 52560206 A 20060921; US 73702203 A 20031215