EP 1656701 A2 20060517 - SEMICONDUCTOR DEVICE AND METHOD
Title (en)
SEMICONDUCTOR DEVICE AND METHOD
Title (de)
HALBLEITEREINRICHTUNG UND VERFAHREN
Title (fr)
DISPOSITIF A SEMI-CONDUCTEUR ET PROCEDE ASSOCIE
Publication
Application
Priority
- US 2004027019 W 20040820
- US 64645703 A 20030822
- US 86110304 A 20040604
- US 86132004 A 20040604
Abstract (en)
[origin: WO2005020287A2] Methods and devices are disclosed for producing controllable light emission from a bipolar transistor. Also, a method is disclosed for increasing the speed of a bipolar transistor, including the following steps: providing a bipolar transistor having emitter, base, and collector regions; providing electrodes for coupling electrical signals with the emitter, base, and collector regions; and adapting the base region to enhance stimulated emission to the detriment of spontaneous emission, so as to reduce carrier recombination lifetime in the base region.
IPC 1-7
IPC 8 full level
H01L 29/205 (2006.01); H01L 29/737 (2006.01); H01L 33/00 (2006.01); H01S 5/06 (2006.01); H01S 5/062 (2006.01)
IPC 8 main group level
H01L (2006.01)
CPC (source: EP)
H01S 5/06203 (2013.01)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2005020287 A2 20050303; WO 2005020287 A3 20050506; WO 2005020287 A9 20050331; CA 2536329 A1 20050303; EP 1656701 A2 20060517; EP 1656701 A4 20071010; JP 2007503710 A 20070222; KR 20060063947 A 20060612
DOCDB simple family (application)
US 2004027019 W 20040820; CA 2536329 A 20040820; EP 04781659 A 20040820; JP 2006524067 A 20040820; KR 20067003675 A 20060222