Global Patent Index - EP 1656701 A4

EP 1656701 A4 20071010 - SEMICONDUCTOR DEVICE AND METHOD

Title (en)

SEMICONDUCTOR DEVICE AND METHOD

Title (de)

HALBLEITEREINRICHTUNG UND VERFAHREN

Title (fr)

DISPOSITIF A SEMI-CONDUCTEUR ET PROCEDE ASSOCIE

Publication

EP 1656701 A4 20071010 (EN)

Application

EP 04781659 A 20040820

Priority

  • US 2004027019 W 20040820
  • US 64645703 A 20030822
  • US 86110304 A 20040604
  • US 86132004 A 20040604

Abstract (en)

[origin: WO2005020287A2] Methods and devices are disclosed for producing controllable light emission from a bipolar transistor. Also, a method is disclosed for increasing the speed of a bipolar transistor, including the following steps: providing a bipolar transistor having emitter, base, and collector regions; providing electrodes for coupling electrical signals with the emitter, base, and collector regions; and adapting the base region to enhance stimulated emission to the detriment of spontaneous emission, so as to reduce carrier recombination lifetime in the base region.

IPC 8 full level

H01L 29/205 (2006.01); H01L 29/737 (2006.01); H01L 33/00 (2006.01); H01S 5/06 (2006.01); H01S 5/062 (2006.01)

IPC 8 main group level

H01L (2006.01)

CPC (source: EP)

H01S 5/06203 (2013.01)

Citation (search report)

  • [X] JP S61231788 A 19861016 - MATSUSHITA ELECTRIC IND CO LTD
  • [PX] FENG M ET AL: "Quantum-well-base heterojunction bipolar light-emitting transistor", APPLIED PHYSICS LETTERS AIP USA, vol. 84, no. 11, 15 March 2004 (2004-03-15), pages 1952 - 1954, XP002448258, ISSN: 0003-6951
  • [PX] FENG M ET AL: "Light-emitting transistor: light emission from InGaP/GaAs heterojunction bipolar transistors", APPLIED PHYSICS LETTERS AIP USA, vol. 84, no. 1, 5 January 2004 (2004-01-05), pages 151 - 153, XP002448259, ISSN: 0003-6951
  • [X] MORI Y ET AL: "Operation principle of the InGaAsP/InP laser transistor", APPLIED PHYSICS LETTERS USA, vol. 47, no. 7, 1 October 1985 (1985-10-01), pages 649 - 651, XP002448260, ISSN: 0003-6951
  • [A] JAIN F ET AL: "RESONANT TUNNELING TRANSISTOR LASERS: A NEW APPROACH TO OBTAIN MULTI-STATE SWITCHING AND BISTABLE OPERATION", INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES, SPRINGER, DORDRECHT, NL, vol. 14, no. 6, 1 June 1993 (1993-06-01), pages 1311 - 1322, XP000381013, ISSN: 0195-9271
  • See references of WO 2005020287A2

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PL PT RO SE SI SK TR

DOCDB simple family (publication)

WO 2005020287 A2 20050303; WO 2005020287 A3 20050506; WO 2005020287 A9 20050331; CA 2536329 A1 20050303; EP 1656701 A2 20060517; EP 1656701 A4 20071010; JP 2007503710 A 20070222; KR 20060063947 A 20060612

DOCDB simple family (application)

US 2004027019 W 20040820; CA 2536329 A 20040820; EP 04781659 A 20040820; JP 2006524067 A 20040820; KR 20067003675 A 20060222