EP 1658394 B1 20100512 - METHOD TO MANUFACTURE INDIUM NITRIDE QUANTUM DOTS AND PRODUCT CONTAINING THESE DOTS
Title (en)
METHOD TO MANUFACTURE INDIUM NITRIDE QUANTUM DOTS AND PRODUCT CONTAINING THESE DOTS
Title (de)
VERFAHREN ZUR HERSTELLUNG VON QUANTENPUNKTEN AUS INDIUMNITRID UND ERZEUGNIS ENTHALTEND DIESE QUANTENPUNKTEN
Title (fr)
PROCEDE DE FABRICATION DE BOITES QUANTIQUES DE NITRURE D'INDIUM ET PRODUIT CONTENANT CES BOITES
Publication
Application
Priority
- IB 0304655 W 20031022
- US 49345203 P 20030808
Abstract (en)
[origin: US2005028726A1] The invention concerns a method for manufacturing sizeable quantum dots of Indium Nitride in which a layer of Indium Nitride is grown onto a layer of crystalline buffer. The crystalline buffer is chosen with a lattice structure similar to the lattice structure of Indium Nitride and with the lattice mismatch between Indium Nitride and the crystalline buffer being greater than 5%. During the growth of Indium Nitride, surface strains are produced by the crystalline buffer, allowing the Indium Nitride to self-organise onto the crystalline buffer so as to form a plurality of sizeable quantum dots.
IPC 8 full level
C30B 25/02 (2006.01); H01L 21/00 (2006.01); H01S 5/00 (2006.01)
CPC (source: EP US)
B82Y 10/00 (2013.01 - EP US); B82Y 20/00 (2013.01 - EP US); B82Y 30/00 (2013.01 - EP US); C30B 25/02 (2013.01 - EP US); C30B 29/403 (2013.01 - EP US); C30B 29/406 (2013.01 - EP US); C30B 29/605 (2013.01 - EP US); Y10S 438/962 (2013.01 - EP US)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR
DOCDB simple family (publication)
US 2005028726 A1 20050210; US 6966948 B2 20051122; AT E467701 T1 20100515; AU 2003274409 A1 20050225; DE 60332559 D1 20100624; EP 1658394 A1 20060524; EP 1658394 B1 20100512; WO 2005014897 A1 20050217
DOCDB simple family (application)
US 68984103 A 20031022; AT 03758390 T 20031022; AU 2003274409 A 20031022; DE 60332559 T 20031022; EP 03758390 A 20031022; IB 0304655 W 20031022