EP 1664395 B1 20110223 - REDUCING NITROGEN CONTENT IN SILICON CARBIDE CRYSTALS BY SUBLIMATION GROWTH IN A HYDROGEN-CONTAINING AMBIENT
Title (en)
REDUCING NITROGEN CONTENT IN SILICON CARBIDE CRYSTALS BY SUBLIMATION GROWTH IN A HYDROGEN-CONTAINING AMBIENT
Title (de)
VERRINGERUNG DES STICKSTOFFGEHALTS IN SILICIUMCARBIDKRISTALLEN DURCH SUBLIMATIONSWACHSTUM IN WASSERSTOFFHALTIGER UMGEBUNG
Title (fr)
REDUCTION DE LA TENEUR EN AZOTE DANS DES CRISTAUX DE CARBURE DE SILICIUM PAR CROISSANCE PAR SUBLIMATION DANS UN MILIEU RENFERMANT DE L'HYDROGENE
Publication
Application
Priority
- US 2004023859 W 20040726
- US 62818803 A 20030728
Abstract (en)
[origin: US7220313B2] The invention herein relates to controlling the nitrogen content in silicon carbide crystals and in particular relates to reducing the incorporation of nitrogen during sublimation growth of silicon carbide. The invention controls nitrogen concentration in a growing silicon carbide crystal by providing an ambient atmosphere of hydrogen in the growth chamber. The hydrogen atoms, in effect, block, reduce, or otherwise hinder the incorporation of nitrogen atoms at the surface of the growing crystal.
IPC 8 full level
C30B 23/00 (2006.01); C30B 29/36 (2006.01)
CPC (source: EP KR US)
C30B 23/00 (2013.01 - KR); C30B 23/002 (2013.01 - EP US); C30B 23/005 (2013.01 - EP US); C30B 25/14 (2013.01 - KR); C30B 29/36 (2013.01 - EP US); Y10S 117/906 (2013.01 - EP US)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
US 2005022727 A1 20050203; US 7220313 B2 20070522; AT E499462 T1 20110315; CA 2533630 A1 20050210; CN 100419134 C 20080917; CN 1829829 A 20060906; DE 602004031537 D1 20110407; EP 1664395 A2 20060607; EP 1664395 B1 20110223; JP 2007500667 A 20070118; JP 4891076 B2 20120307; KR 20060052942 A 20060519; TW 200510583 A 20050316; WO 2005012601 A2 20050210; WO 2005012601 A3 20050324
DOCDB simple family (application)
US 62818803 A 20030728; AT 04779093 T 20040726; CA 2533630 A 20040726; CN 200480021731 A 20040726; DE 602004031537 T 20040726; EP 04779093 A 20040726; JP 2006521948 A 20040726; KR 20067002076 A 20060127; TW 93122584 A 20040728; US 2004023859 W 20040726