EP 1665337 A4 20071031 - DOPED ALLOYS FOR ELECTRICAL INTERCONNECTS, METHODS OF PRODUCTION AND USES THEREOF
Title (en)
DOPED ALLOYS FOR ELECTRICAL INTERCONNECTS, METHODS OF PRODUCTION AND USES THEREOF
Title (de)
DOTIERTE LEGIERUNGEN FÜR ELEKTRISCHE VERBINDUNGEN, HERSTELLUNGSVERFAHREN UND VERWENDUNGEN DAFÜR
Title (fr)
ALLIAGES DOPES POUR DES INTERCONNEXIONS ELECTRIQUES ET PROCEDES DE PRODUCTION ET D'UTILISATION DESDITS ALLIAGES
Publication
Application
Priority
- US 2004028837 W 20040907
- US 50138403 P 20030908
Abstract (en)
[origin: WO2005027198A2] Solder materials and dopants described herein comprise at least one solder material, at least one phosphorus-based dopant and at least one copper-based dopant. Methods of forming doped solder materials include: a) providing at least one solder material; b) providing at least one phosphorus-based dopant; c) providing at least one copper-based dopant, and d) blending the at least one solder material, the at least one phosphorus-based dopant and the at least one copper-based dopant to form a doped solder material. Layered materials are also described herein that comprise: a) a surface or substrate; b) an electrical interconnect; c) a solder material comprising at least one phosphorus-based dopant and at least one copper-based dopant, such as those described herein, and d) a semiconductor die or package. Electronic and semiconductor components that comprise solder materials and/or layered materials described herein are also contemplated.
IPC 8 full level
H01L 23/48 (2006.01); B23K 35/24 (2006.01); B23K 35/26 (2006.01); H01L 21/78 (2006.01); H01L 23/485 (2006.01); H01L 23/488 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01)
IPC 8 main group level
H01L (2006.01)
CPC (source: EP KR)
B23K 35/24 (2013.01 - EP); B23K 35/262 (2013.01 - EP); H01L 23/50 (2013.01 - KR); H01L 24/10 (2013.01 - EP); H01L 24/13 (2013.01 - EP); H01L 2224/13 (2013.01 - EP); H01L 2224/13099 (2013.01 - EP); H01L 2924/01005 (2013.01 - EP); H01L 2924/01006 (2013.01 - EP); H01L 2924/01013 (2013.01 - EP); H01L 2924/01015 (2013.01 - EP); H01L 2924/01027 (2013.01 - EP); H01L 2924/01029 (2013.01 - EP); H01L 2924/01032 (2013.01 - EP); H01L 2924/01033 (2013.01 - EP); H01L 2924/01047 (2013.01 - EP); H01L 2924/01049 (2013.01 - EP); H01L 2924/01051 (2013.01 - EP); H01L 2924/01057 (2013.01 - EP); H01L 2924/01067 (2013.01 - EP); H01L 2924/01078 (2013.01 - EP); H01L 2924/01079 (2013.01 - EP); H01L 2924/01082 (2013.01 - EP); H01L 2924/01084 (2013.01 - EP); H01L 2924/01322 (2013.01 - EP); H01L 2924/01327 (2013.01 - EP); H01L 2924/014 (2013.01 - EP); H01L 2924/1301 (2013.01 - EP); H01L 2924/13034 (2013.01 - EP); H01L 2924/1305 (2013.01 - EP); H01L 2924/1306 (2013.01 - EP); H01L 2924/14 (2013.01 - EP); H01L 2924/19041 (2013.01 - EP); H01L 2924/19042 (2013.01 - EP); H01L 2924/19043 (2013.01 - EP)
Citation (search report)
- [X] GB 2319039 A 19980513 - SAMSUNG ELECTRONICS CO LTD [KR]
- [X] JP H11267880 A 19991005 - ISHIKAWA KINZOKU KK
- [X] US 2003024733 A1 20030206 - AOYAMA SEIGI [JP], et al
- [PX] EP 1402988 A1 20040331 - SENJU METAL INDUSTRY CO [JP]
- See references of WO 2005027198A2
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
WO 2005027198 A2 20050324; WO 2005027198 A3 20050922; CN 1943030 A 20070404; DE 04783167 T1 20070104; EP 1665337 A2 20060607; EP 1665337 A4 20071031; JP 2007533457 A 20071122; KR 20070027485 A 20070309; TW 200513337 A 20050416; TW I272152 B 20070201
DOCDB simple family (application)
US 2004028837 W 20040907; CN 200480025512 A 20040907; DE 04783167 T 20040907; EP 04783167 A 20040907; JP 2006525484 A 20040907; KR 20067004601 A 20060306; TW 93127208 A 20040908