EP 1667215 A4 20100224 - DRY ETCHING PROCESS AND METHOD FOR MANUFACTURING MAGNETIC MEMORY DEVICE
Title (en)
DRY ETCHING PROCESS AND METHOD FOR MANUFACTURING MAGNETIC MEMORY DEVICE
Title (de)
TROCKENÄTZPROZESS UND VERFAHREN ZUR HERSTELLUNG EINES MAGNETSPEICHERBAUSTEINS
Title (fr)
PROCEDE DE GRAVURE A SEC ET PROCEDE DE FABRICATION DE DISPOSITIF A MEMOIRE MAGNETIQUE
Publication
Application
Priority
- JP 2004012292 W 20040826
- JP 2003303410 A 20030827
Abstract (en)
[origin: EP1667215A1] Provision of a process capable of preferably etching particularly PtMn used for a pin layer of an MRAM is an object: a dry etching method for performing dry etching on a layer including platinum and/or manganese by using pulse plasma and a production method of an MRAM, wherein the dry etching method is applied to processing of the pin layer. The MRAM is configured to have a memory portion comprising a magnetic memory element composed of tunnel magnetoresistive effect element formed by stacking a magnetic fixed layer having a fixed magnetization direction, a tunnel barrier layer and a magnetic layer capable of changing the magnetization direction.
IPC 8 full level
H01L 21/3065 (2006.01); H01L 21/3213 (2006.01); H01L 21/8239 (2006.01); H01L 21/8246 (2006.01); H01L 27/105 (2006.01); H01L 43/08 (2006.01); H01L 43/12 (2006.01); H01L 27/22 (2006.01)
CPC (source: EP US)
B82Y 10/00 (2013.01 - EP US); H01L 21/32136 (2013.01 - EP US); H10N 50/01 (2023.02 - EP US); H10B 61/22 (2023.02 - EP US)
Citation (search report)
- [X] US 4935661 A 19900619 - HEINECKE RUDOLF A [GB], et al
- [X] US 5705443 A 19980106 - STAUF GREGORY [US], et al
- [X] BANDURA A.N. ET AL: "Structure and Tribological Characteristics of Modified Surface Layers of Steel Samples Processed by Pulsed Plasma Streams", 27TH EPS CONFERENCE ON CONTR. FUSION AND PLASMA PHYS. BUDAPEST, vol. 24B, 12 June 2000 (2000-06-12) - 16 June 2000 (2000-06-16), pages 1272 - 1275, XP002562249
- [A] AHN T H ET AL: "Negative ion measurements and etching in a pulsed-power inductively coupled plasma in chlorine", PLASMA SOURCES SCIENCE AND TECHNOLOGY, INSTITUTE OF PHYSICS PUBLISHING, BRISTOL, GB, vol. 5, no. 2, 1 May 1996 (1996-05-01), pages 139 - 144, XP020070119, ISSN: 0963-0252
- See references of WO 2005022622A1
Designated contracting state (EPC)
FR
DOCDB simple family (publication)
EP 1667215 A1 20060607; EP 1667215 A4 20100224; JP 2005072491 A 20050317; JP 4483231 B2 20100616; TW 200522199 A 20050701; TW I392013 B 20130401; US 2007026681 A1 20070201; US 2008286883 A1 20081120; US 7473646 B2 20090106; US 7808026 B2 20101005; WO 2005022622 A1 20050310; WO 2005022622 A9 20060413
DOCDB simple family (application)
EP 04772248 A 20040826; JP 2003303410 A 20030827; JP 2004012292 W 20040826; TW 93125895 A 20040827; US 15384808 A 20080527; US 56896006 A 20060222