EP 1668681 A1 20060614 - A SEMICONDUCTOR DEVICE HAVING A NICKEL/COBALT SILICIDE REGION FORMED IN A SILICON REGION
Title (en)
A SEMICONDUCTOR DEVICE HAVING A NICKEL/COBALT SILICIDE REGION FORMED IN A SILICON REGION
Title (de)
HALBLEITERBAUELEMENT MIT EINER IN EINER SILIZIUMREGION AUSGEBILDETEN NICKEL-COBALTSILIZID-REGION
Title (fr)
DISPOSITIF A SEMI-CONDUCTEUR COMPRENANT UNE ZONE DE SILICIURE DE NICKEL/COBALT FORMEE DANS UNE ZONE DE SILICIUM
Publication
Application
Priority
- US 2004031037 W 20040917
- DE 10345374 A 20030930
- US 85955204 A 20040602
Abstract (en)
[origin: WO2005034225A1] By forming a buried nickel silicide layer (260A) followed by a cobalt silicide layer (261A) in silicon containing regions, such as a gate electrode of a field effect transistor, the superior characteristics of both silicides may be combined so as to provide the potential for further device scaling without unduly compromising the sheet resistance and the contact resistance of scaled silicon circuit features.
IPC 1-7
IPC 8 full level
H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/336 (2006.01)
CPC (source: EP KR)
H01L 21/24 (2013.01 - KR); H01L 21/28052 (2013.01 - EP); H01L 21/28518 (2013.01 - EP); H01L 29/665 (2013.01 - EP)
Citation (search report)
See references of WO 2005034225A1
Designated contracting state (EPC)
DE GB
DOCDB simple family (publication)
WO 2005034225 A1 20050414; EP 1668681 A1 20060614; JP 2007527111 A 20070920; KR 20060091308 A 20060818
DOCDB simple family (application)
US 2004031037 W 20040917; EP 04784756 A 20040917; JP 2006533961 A 20040917; KR 20067006181 A 20060329