EP 1670074 A3 20101117 - Light emitting diode headlamp
Title (en)
Light emitting diode headlamp
Title (de)
Leuchtdiodenscheinwerfer
Title (fr)
Phare à diodes électroluminescentes
Publication
Application
Priority
JP 2004355735 A 20041208
Abstract (en)
[origin: EP1670074A2] An automotive headlamp (82) is equipped with a light source containing one or more light-emitting diodes LEDs, and a base member, namely a pedestal and rear case, for securing the light source to the automobile (80). The LED includes: a GaN substrate (1); a n-type Al x Ga 1-x N layer (3) on a first main surface side of the GaN substrate (1); a p-type Al x Ga 1-x N layer (5) positioned further away from the GaN substrate (1) compared to the n-type Al x Ga 1-x N layer (3); and a multi-quantum well (4) positioned between the n-type Al x Ga 1-x N layer (3) and the p-type Al x Ga 1-x N layer (5). In this LED, the specific resistance of the GaN substrate (1) is no more than 0.5 ©·cm, the p-type Al x Ga 1-x N layer (5) side is down-mounted, and light is discharged from a second main surface (1a), which is the main surface of the GaN substrate (1) opposite from the first main surface.
IPC 8 full level
H01L 33/00 (2010.01); F21S 8/10 (2006.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01); H01L 33/50 (2010.01)
CPC (source: EP KR US)
B60Q 9/00 (2013.01 - KR); F21S 41/143 (2017.12 - EP US); F21S 41/151 (2017.12 - EP US); F21S 41/155 (2017.12 - EP US); H01L 33/32 (2013.01 - EP US); F21Y 2115/10 (2016.07 - EP US); H01L 2224/0554 (2013.01 - EP US); H01L 2224/05568 (2013.01 - EP US); H01L 2224/05573 (2013.01 - EP US); H01L 2224/14 (2013.01 - EP US); H01L 2224/16245 (2013.01 - EP US); H01L 2224/32245 (2013.01 - EP US); H01L 2224/32257 (2013.01 - EP US); H01L 2224/45015 (2013.01 - EP); H01L 2224/45139 (2013.01 - EP US); H01L 2224/45144 (2013.01 - EP US); H01L 2224/48091 (2013.01 - EP US); H01L 2224/48247 (2013.01 - EP US); H01L 2224/73265 (2013.01 - EP US); H01L 2224/8592 (2013.01 - EP US); H01L 2924/00011 (2013.01 - EP); H01L 2924/00014 (2013.01 - EP US)
Citation (search report)
- [Y] EP 1411557 A2 20040421 - STANLEY ELECTRIC CO LTD [JP]
- [Y] EP 1249522 A2 20021016 - SUMITOMO ELECTRIC INDUSTRIES [JP]
- [A] US 2003062530 A1 20030403 - OKAZAKI HARUHIKO [JP], et al
- [A] WO 2004097950 A1 20041111 - ZAKRYTOE AKTSIONERNOE OBSCHEST [RU], et al
- [A] EP 0966047 A2 19991222 - SUMITOMO ELECTRIC INDUSTRIES [JP]
- [AP] EP 1571716 A1 20050907 - SUMITOMO ELECTRIC INDUSTRIES [JP] & EP 1624496 A1 20060208 - ZAKRYTOE AKSIONERNOE OBSCHESTV [RU]
- [A] TAE-KYUNG YOO, YOONHO CHOI: "GaN Optical Devices on free-standing GaN Substrates", TECHNICAL DIGEST. CLEO/PACIFIC RIM '99. PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS (CAT. NO.99TH8464) IEEE, vol. 2, 1999, PISCATAWAY, NJ, USA, pages 282 - 283, XP002602156, ISBN: 0-7803-5661-6
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR
Designated extension state (EPC)
AL BA HR MK YU
DOCDB simple family (publication)
EP 1670074 A2 20060614; EP 1670074 A3 20101117; CA 2525813 A1 20060608; CN 100524853 C 20090805; CN 1787245 A 20060614; JP 2006164796 A 20060622; JP 4384019 B2 20091216; KR 101163783 B1 20120709; KR 20060064535 A 20060613; SG 123669 A1 20060726; TW 200633262 A 20060916; US 2006118775 A1 20060608
DOCDB simple family (application)
EP 05025580 A 20051123; CA 2525813 A 20051107; CN 200510022816 A 20051208; JP 2004355735 A 20041208; KR 20050118193 A 20051206; SG 200507084 A 20051117; TW 94138496 A 20051102; US 26923205 A 20051107