EP 1678095 A1 20060712 - SUBSTRATE, IN PARTICULAR GLASS SUBSTRATE, SUPPORTING AT LEAST ONE STACK OF A PHOTOCATALYTIC LAYER AND A SUBLAYER FOR THE HETEROEPITAXIAL GROWTH OF SAID LAYER
Title (en)
SUBSTRATE, IN PARTICULAR GLASS SUBSTRATE, SUPPORTING AT LEAST ONE STACK OF A PHOTOCATALYTIC LAYER AND A SUBLAYER FOR THE HETEROEPITAXIAL GROWTH OF SAID LAYER
Title (de)
SUBSTRAT, INSBESONDERE GLASSUBSTRAT, DAS MINDESTENS EINEN STAPEL AUS EINER PHOTOKATALYTISCHEN SCHICHT UND EINER UNTERSCHICHT FÜR DAS HETEROEPITAKTISCHE AUFWACHSEN DER SCHICHT TRÄGT
Title (fr)
SUBSTRAT, NOTAMMENT SUBSTRAT VERRIER, PORTANT AU MOINS UN EMPILEMENT COUCHE A PROPRIETE PHOTOCATALYTIQUE / SOUS-COUCHE DE CROISSANCE HETEROEPITAXIALE DE LADITE COUCHE
Publication
Application
Priority
- FR 2004050532 W 20041022
- FR 0350729 A 20031023
Abstract (en)
[origin: FR2861385A1] A structure comprises a substrate carrying, on at least a part of its surface, a titanium oxide (TiO 2) based layer with anti-stain photocatalytic properties. The TiO 2 is at least in part crystallised in the form of anatase. It incorporates, immediately beneath the TiO 2 layer, a sub-layer with a crystallographic structure allowing an assistance to crystallisation by hetero-epitaxial growth in the form of anatase of the upper layer of the TiO 2 base, the photocatalytic property having been acquired without any heating stage. Independent claims are also included for: (a) the fabrication of this structure; (b) a single or multiple glazing incorporating this structure.
IPC 1-7
IPC 8 full level
C03C 17/34 (2006.01); C03C 25/52 (2006.01); C04B 41/52 (2006.01)
CPC (source: EP KR US)
B32B 18/00 (2013.01 - KR); B32B 33/00 (2013.01 - KR); C03C 17/23 (2013.01 - KR); C03C 17/3417 (2013.01 - EP US); C03C 17/3435 (2013.01 - EP US); C03C 25/52 (2013.01 - EP KR US); C03C 2217/71 (2013.01 - EP US)
Citation (search report)
See references of WO 2005040058A1
Citation (examination)
HSIEH C C ET AL: "Monophasic TiO2 films deposited on SrTiO3(100) by pulsed laser ablation", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 92, no. 5, 1 September 2002 (2002-09-01), pages 2518 - 2523, XP012057150, ISSN: 0021-8979
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
FR 2861385 A1 20050429; FR 2861385 B1 20060217; CA 2543075 A1 20050506; CA 2543075 C 20130528; CN 1898173 A 20070117; CN 1898173 B 20121114; EP 1678095 A1 20060712; JP 2007508933 A 20070412; JP 5290519 B2 20130918; KR 101131532 B1 20120404; KR 20060090830 A 20060816; US 2007129248 A1 20070607; US 7737080 B2 20100615; WO 2005040058 A1 20050506
DOCDB simple family (application)
FR 0350729 A 20031023; CA 2543075 A 20041022; CN 200480038826 A 20041022; EP 04805775 A 20041022; FR 2004050532 W 20041022; JP 2006536150 A 20041022; KR 20067007468 A 20041022; US 57672404 A 20041022