GPI coverage and content

You can use Global Patent Index (GPI) to carry out detailed searches in the EPO's worldwide bibliographic (DOCDB), legal event (INPADOC) and full-text data sets, and download or visualise the search results for statistical analysis.

Current content: 155 519 367 patent documents

This week's update (03/05/2024 12:00 CET):

123 361 new documents added

1 354 331 documents amended

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EP 1690286 A4 20090708 - FIELD EFFECT TRANSISTOR WITH ENHANCED INSULATOR STRUCTURE

Title (en)

FIELD EFFECT TRANSISTOR WITH ENHANCED INSULATOR STRUCTURE

Title (de)

FELDEFFEKTTRANSISTOR MIT VERBESSERTER ISOLATORSTRUKTUR

Title (fr)

TRANSISTOR A EFFET DE CHAMP PRESENTANT UNE STRUCTURE ISOLANTE AMELIOREE

Publication

EP 1690286 A4 20090708 (EN)

Application

EP 04817951 A 20041206

Priority

US 2004040599 W 20041206
US 52763103 P 20031205

IPC 8 full level

H01L 21/3205 (2006.01); H01L 21/336 (2006.01); H01L 21/4763 (2006.01); H01L 29/20 (2006.01); H01L 29/739 (2006.01); H01L 29/778 (2006.01); H01L 31/0328 (2006.01); H01L 31/0336 (2006.01); H01L 31/072 (2006.01); H01L 31/109 (2006.01)

CPC (source: EP)

H01L 29/2003 (2013.01); H01L 29/7787 (2013.01)

Citation (search report)

[X] US 6429467 B1 20020806 - ANDO YUJI [JP]
[X] US 2002139995 A1 20021003 - INOUE KAORU [JP], et al
See references of WO 2005057623A2

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU MC NL PL PT RO SE SI SK TR

DOCDB simple family (publication)

EP 1690286 A2 20060816; EP 1690286 A4 20090708

DOCDB simple family (application)

EP 04817951 A 20041206