EP 1695380 A1 20060830 - METHOD TO REDUCE SEEDLAYER TOPOGRAPHY IN BICMOS PROCESS
Title (en)
METHOD TO REDUCE SEEDLAYER TOPOGRAPHY IN BICMOS PROCESS
Title (de)
VERFAHREN ZUR REDUKTION DER SEEDLAYER-TOPOGRAPHIE IN BICMOS-PROZESSEN
Title (fr)
PROCEDE DE REDUCTION DE LA TOPOGRAPHIE D'UNE COUCHE D'ENSEMENCEMENT DANS UN PROCEDE BICMOS
Publication
Application
Priority
- IB 2004052742 W 20041209
- US 52902803 P 20031212
Abstract (en)
[origin: WO2005059989A1] A method for forming an epitaxial base layer in a bipolar device. The method comprises the steps of: providing a structure having a field isolation oxide region (12) adjacent to an active silicon region (10); forming a silicon nitride/silicon stack (14, 16) above the field isolation oxide region (12), wherein the silicon nitride/silicon stack (14, 16) includes a top layer of silicon (14) and a bottom layer of silicon nitride (16); performing an etch to the silicon nitride/silicon stack (14, 16) to form a stepped seed layer, wherein the top layer of silicon is etched laterally at the same time the bottom layer of silicon nitride is etched; and growing an Si/SiGe/Si stack (20) over the stepped seed layer and active region (10).
IPC 8 full level
H01L 21/8249 (2006.01); H01L 21/331 (2006.01)
CPC (source: EP KR US)
H01L 21/8249 (2013.01 - EP US); H01L 29/66242 (2013.01 - EP US); H01L 29/66272 (2013.01 - EP US); H01L 29/70 (2013.01 - KR)
Citation (search report)
See references of WO 2005059989A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2005059989 A1 20050630; AT E545952 T1 20120315; CN 100499043 C 20090610; CN 1890786 A 20070103; EP 1695380 A1 20060830; EP 1695380 B1 20120215; JP 2007514314 A 20070531; JP 4874119 B2 20120215; KR 101060426 B1 20110829; KR 20060118541 A 20061123; US 2007111485 A1 20070517; US 7566919 B2 20090728
DOCDB simple family (application)
IB 2004052742 W 20041209; AT 04801525 T 20041209; CN 200480036586 A 20041209; EP 04801525 A 20041209; JP 2006543706 A 20041209; KR 20067011315 A 20041209; US 58163904 A 20041209