EP 1700290 B1 20190116 - IMAGE DISPLAY SCREEN AND METHOD OF ADDRESSING SAID SCREEN
Title (en)
IMAGE DISPLAY SCREEN AND METHOD OF ADDRESSING SAID SCREEN
Title (de)
BILDANZEIGESCHIRM UND VERFAHREN ZUR ADRESSIERUNG DES SCHIRMS
Title (fr)
ECRAN D'AFFICHAGE D'IMAGES ET PROCEDE D'ADRESSAGE DE CET ECRAN
Publication
Application
Priority
- FR 2004003104 W 20041202
- FR 0315629 A 20031231
Abstract (en)
[origin: WO2005073948A1] The invention relates to a display screen comprising: light emitters (4) which are distributed in rows and columns of emitters; and a first addressing circuit (6, 14, 16, 18) which is associated with each emitter of the network, said circuit (6) comprising a first current modulator (14) which can power the emitter (4) and a first storage capacity (16) which can store a potential at the grid electrode of the first current modulator (14). The inventive screen comprises at least one second emitter addressing circuit (12, 34, 36, 38), said first and second addressing circuits being associated with the same emitter. In addition, the second circuit comprises a second current modulator (34) for the emitter and a second storage capacity (36) which can store a potential at the grid electrode of the second current modulator. The invention also relates to a method of addressing the screen.
IPC 8 full level
CPC (source: EP KR)
G09G 3/20 (2013.01 - KR); G09G 3/30 (2013.01 - KR); G09G 3/32 (2013.01 - KR); G09G 3/3233 (2013.01 - EP); G09G 2300/0417 (2013.01 - EP); G09G 2300/0809 (2013.01 - EP); G09G 2300/0852 (2013.01 - EP); G09G 2310/0254 (2013.01 - EP); G09G 2320/043 (2013.01 - EP)
Citation (examination)
- JP 2001034231 A 20010209 - SEIKO EPSON CORP
- EP 1111574 A2 20010627 - SEMICONDUCTOR ENERGY LAB [JP]
- KIM J H ET AL: "THRESHOLD VOLTAGE SHIFT OF AMORPHOUS SILICON THIN FILM TRANSISTORS WITH ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION SILICON DIOXIDE", APPLIED PHYSICS LETTERS, A I P PUBLISHING LLC, US, vol. 64, no. 18, 2 May 1994 (1994-05-02), pages 2362/2363, XP000440965, ISSN: 0003-6951, DOI: 10.1063/1.111615
- HACK M ET AL: "Drain-Bias Dependence of Threshold Voltage Stability of Amorphous Silicon TFTs", IEEE ELECTRON DEVICE LETTERS, IEEE SERVICE CENTER, NEW YORK, NY, US, vol. 25, no. 4, 1 April 2004 (2004-04-01), pages 188 - 190, XP011109652, ISSN: 0741-3106, DOI: 10.1109/LED.2004.825154
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
WO 2005073948 A1 20050811; CN 100456346 C 20090128; CN 1902675 A 20070124; EP 1700290 A1 20060913; EP 1700290 B1 20190116; JP 2007519949 A 20070719; JP 5074769 B2 20121114; KR 101205912 B1 20121128; KR 20060135670 A 20061229
DOCDB simple family (application)
FR 2004003104 W 20041202; CN 200480039197 A 20041202; EP 04805623 A 20041202; JP 2006546220 A 20041202; KR 20067012112 A 20041202