EP 1702369 A1 20060920 - SEMICONDUCTOR ARRANGEMENT WITH NON-VOLATILE MEMORIES
Title (en)
SEMICONDUCTOR ARRANGEMENT WITH NON-VOLATILE MEMORIES
Title (de)
HALBLEITERANORDNUNG MIT NICHTFLÜCHTIGEN SPEICHERN
Title (fr)
DISPOSITIF A SEMI-CONDUCTEURS ORGANIQUE COMPRENANT DES MEMOIRES NON VOLATILES
Publication
Application
Priority
- DE 2004002601 W 20041124
- DE 10355561 A 20031128
Abstract (en)
[origin: WO2005053027A1] The invention relates to a semiconductor arrangement comprising at least one non-volatile memory cell that is provided with a first electrode which consists of at least two layers. Said semiconductor arrangement further comprises an organic material that forms a bond with the layer of the first electrode, which is in direct contact therewith. The invention also relates to a method for producing said non-volatile memory cell, a semiconductor arrangement comprising a plurality of inventive memory cells, and a method for the production thereof.
IPC 8 full level
H01L 51/00 (2006.01); C09D 5/24 (2006.01); C09D 5/25 (2006.01); G11C 13/02 (2006.01); H01L 27/24 (2006.01); H01L 27/28 (2006.01); H01L 51/05 (2006.01); H01L 51/30 (2006.01)
CPC (source: EP US)
B82Y 10/00 (2013.01 - EP US); G11C 13/0014 (2013.01 - EP US); G11C 13/0016 (2013.01 - EP US); H10K 10/701 (2023.02 - EP US); H10K 19/00 (2023.02 - US); H10K 19/80 (2023.02 - EP); H10K 85/113 (2023.02 - EP US); H10K 85/611 (2023.02 - EP US); H10K 85/649 (2023.02 - EP US)
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
WO 2005053027 A1 20050609; DE 10355561 A1 20050630; EP 1702369 A1 20060920; US 2007194301 A1 20070823
DOCDB simple family (application)
DE 2004002601 W 20041124; DE 10355561 A 20031128; EP 04802810 A 20041124; US 58088104 A 20041124