EP 1709484 A2 20061011 - PROTECTED PATTERN MASK FOR REFLECTION LITHOGRAPHY IN THE EXTREME UV OR SOFT X-RAY RANGE
Title (en)
PROTECTED PATTERN MASK FOR REFLECTION LITHOGRAPHY IN THE EXTREME UV OR SOFT X-RAY RANGE
Title (de)
GESCHÜTZTE STRUKTURMASKE FÜR DIE REFLEXIONSLITHOGRAPHIE IM EXTREM-UV ODER WEICHEN RÖNTGEN BEREICH
Title (fr)
MASQUE A MOTIFS PROTEGES, POUR LA LITHOGRAPHIE PAR REFLEXION DANS LE DOMAINE DE L'EXTREME UV ET DES RAYONS X MOUS
Publication
Application
Priority
- FR 2005000168 W 20050126
- FR 0400907 A 20040130
Abstract (en)
[origin: FR2865813A1] The mask has a substrate (ST) whose one side is integrated to a reflecting structure (SMR), and including a desired pattern (MF) on its front side. A transparent protecting unit (SP) maintains disruptive particles (PP) at a distance (H) of the pattern i.e. greater or equal to one of two values taken from the depth of focus of a lithography device and the height associated to a part allowed for photons absorption by the particles.
IPC 8 full level
G03F 1/24 (2012.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01); G03F 1/62 (2012.01)
CPC (source: EP US)
B82Y 10/00 (2013.01 - EP US); B82Y 40/00 (2013.01 - EP US); G03F 1/24 (2013.01 - EP US); G03F 1/62 (2013.01 - EP US)
Citation (examination)
EP 1385051 A1 20040128 - ASML NETHERLANDS BV [NL]
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
FR 2865813 A1 20050805; FR 2865813 B1 20060623; EP 1709484 A2 20061011; US 2007160913 A1 20070712; US 7763394 B2 20100727; WO 2005083516 A2 20050909; WO 2005083516 A3 20060504
DOCDB simple family (application)
FR 0400907 A 20040130; EP 05717492 A 20050126; FR 2005000168 W 20050126; US 58719406 A 20060724