EP 1713083 A1 20061018 - Non-volatile memory electronic device with NAND structure being monolithically integrated on semiconductor
Title (en)
Non-volatile memory electronic device with NAND structure being monolithically integrated on semiconductor
Title (de)
Integriete Schaltung mit nichflüchtigem Speicher des NAND-Typs
Title (fr)
Circuit intégré à mémoire non volatile de structure NAND
Publication
Application
Priority
EP 05425207 A 20050411
Abstract (en)
The invention relates to a non volatile memory electronic device (20) integrated on semiconductor and of the Flash EEPROM type with NAND architecture comprising at least one memory matrix (21) divided into physical sectors, intended as smallest erasable units, and organised in rows or word lines (WL) and columns or bit lines (BL) of memory cells. At least one row (ROW_i) or word line of a given physical sector is electrically connected to at least one row or word line of an adjacent physical sector to form a single logic sector being completely erasable, with the source terminals of the corresponding cells of the pair of connected rows referring to a same selection line (SSL) of source line.
IPC 8 full level
G11C 16/16 (2006.01)
CPC (source: EP)
G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/24 (2013.01)
Citation (applicant)
- US 2001038118 A1 20011108 - SAKUI KOJI [JP], et al
- US 2002186591 A1 20021212 - LEE SEUNG-JAE [KR], et al
Citation (search report)
[A] US 5732018 A 19980324 - CHOI DO-CHAN [KR], et al
Designated contracting state (EPC)
DE FR GB IT
Designated extension state (EPC)
AL BA HR LV MK YU
DOCDB simple family (publication)
DOCDB simple family (application)
EP 05425207 A 20050411