EP 1713095 A3 20070307 - Method of manufacture of semiconductor device and conductive compositions used therein
Title (en)
Method of manufacture of semiconductor device and conductive compositions used therein
Title (de)
Herstellungsverfahren von Halbleitervorrichtungen und dabei verwendete leitfähige Zusammensetzungen
Title (fr)
Méthode de fabrication de dispositif semiconducteur et compositions conductrices utilisées
Publication
Application
Priority
US 10624505 A 20050414
Abstract (en)
[origin: EP1713095A2] The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) Mn-containing additive; (c) glass frit wherein said glass frit has a softening point in the range of 300 to 600°C.; dispersed in (d) organic medium. The present invention is further directed to a semiconductor device and a method of manufacturing a semiconductor device from a structural element composed of a semiconductor having a p-n junction and an insulating film formed on a main surface of the semiconductor comprising the steps of (a) applying onto said insulating film the thick film composition of the invention; and (b) firing said semiconductor, insulating film and thick film composition to form an electrode.
IPC 8 full level
H01B 1/22 (2006.01); H01L 31/0224 (2006.01)
CPC (source: EP KR US)
C03C 3/064 (2013.01 - EP US); C03C 3/072 (2013.01 - EP US); C03C 3/0745 (2013.01 - EP US); C03C 8/10 (2013.01 - EP US); C03C 8/12 (2013.01 - EP US); C03C 8/14 (2013.01 - EP US); C03C 8/16 (2013.01 - EP US); C03C 8/18 (2013.01 - EP US); C03C 8/20 (2013.01 - EP US); C03C 14/006 (2013.01 - EP US); H01B 1/22 (2013.01 - EP KR US); H01L 31/0224 (2013.01 - KR); H01L 31/022425 (2013.01 - EP US); H01L 31/04 (2013.01 - KR); C03C 2214/08 (2013.01 - EP US); C03C 2214/16 (2013.01 - EP US); H05K 1/092 (2013.01 - EP US); Y02E 10/50 (2013.01 - EP US); Y10T 428/24612 (2015.01 - EP US); Y10T 428/31678 (2015.04 - EP US)
Citation (search report)
- [XY] EP 1506944 A1 20050216 - DU PONT [US]
- [Y] US 5645765 A 19970708 - ASADA EIICHI [JP], et al
- [Y] US 4256513 A 19810317 - YOSHIDA MANABU, et al
- [A] EP 0474879 A1 19920318 - ASAHI CHEMICAL IND [JP]
- [A] EP 0545166 A1 19930609 - DU PONT [US]
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR
Designated extension state (EPC)
AL BA HR MK YU
DOCDB simple family (publication)
EP 1713095 A2 20061018; EP 1713095 A3 20070307; EP 1713095 B1 20110803; AU 2006201555 A1 20061102; CN 1862839 A 20061115; CN 1862839 B 20100421; JP 2006302891 A 20061102; JP 5362946 B2 20131211; KR 100887128 B1 20090304; KR 20060108551 A 20061018; TW 200731291 A 20070816; TW I338308 B 20110301; US 2006231800 A1 20061019; US 2009044858 A1 20090219; US 7462304 B2 20081209; US 8313673 B2 20121120
DOCDB simple family (application)
EP 06252077 A 20060413; AU 2006201555 A 20060412; CN 200610074811 A 20060414; JP 2006112246 A 20060414; KR 20060034126 A 20060414; TW 95113535 A 20060414; US 10624505 A 20050414; US 25682508 A 20081023