EP 1719136 A1 20061108 - NON-SWITCHING PRE-AND POST-DISTURB COMPENSATIONAL PULSES
Title (en)
NON-SWITCHING PRE-AND POST-DISTURB COMPENSATIONAL PULSES
Title (de)
NICHT-SCHALT-VOR- UND -NACH-STÖRKOMPENSATIONS-IMPULSE
Title (fr)
IMPULSIONS COMPENSATOIRES PRE- ET POST-PERTURBATION RESULTANT D'UNE NON COMMUTATION
Publication
Application
Priority
- NO 2005000044 W 20050207
- NO 20040644 A 20040213
Abstract (en)
[origin: WO2005078730A1] In a method for operating a passive matrix-addessable ferroelectric or electret memory device comprising memory cells in the form of a ferroelectric or electret thin-film polarizable memory material exhibiting hysteresis, particularly a ferroelectric or electret polymer thin film, and a first set of parallel electrodes forming word line electrodes in the device and a second set of parallel electrodes forming bit lines in the device, the word lines being oriented orthogonally to the bit lines, such that the word lines and bit lines are in direct contact with the memory cells, which can be set to either of two polarization states or switched between these by applying a switching voltage larger than a coercive voltage of the memory material between a word line and a bit line, a voltage pulse protocol with at least one disturb generating operation cycle is applied for switching selected addressed cells to determined polarization state. The voltage pulse protocol further comprises a pre-disturb and/or post-disturb cycle before and after the disturb generating operation cycle respectively in order to minimize the effect of disturb voltages on non-addressed memory cells, when such voltages are generated thereto in the operation cycle when it is applied for either a write or read operation.
IPC 8 full level
G11C 8/18 (2006.01); G11C 11/22 (2006.01); G11C 16/34 (2006.01)
CPC (source: EP KR US)
G11C 7/18 (2013.01 - KR); G11C 8/14 (2013.01 - KR); G11C 11/22 (2013.01 - EP US); G11C 11/2253 (2013.01 - KR); G11C 11/2273 (2013.01 - KR); G11C 11/2275 (2013.01 - KR)
Citation (search report)
See references of WO 2005078730A1
Citation (examination)
EP 1031989 A1 20000830 - ROHM CO LTD [JP]
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2005078730 A1 20050825; AU 2005213099 A1 20050825; CA 2555581 A1 20050825; CN 1918662 A 20070221; EP 1719136 A1 20061108; JP 2007522602 A 20070809; KR 100823007 B1 20080417; KR 20060111721 A 20061027; NO 20040644 D0 20040213; NO 20040644 L 20050815; NO 320149 B1 20051031; RU 2006130851 A 20080320; RU 2326456 C1 20080610; US 2005248979 A1 20051110; US 7020005 B2 20060328
DOCDB simple family (application)
NO 2005000044 W 20050207; AU 2005213099 A 20050207; CA 2555581 A 20050207; CN 200580004812 A 20050207; EP 05710941 A 20050207; JP 2006553076 A 20050207; KR 20067018762 A 20060913; NO 20040644 A 20040213; RU 2006130851 A 20050207; US 5390505 A 20050210