EP 1719162 B8 20160511 - METHOD OF MAKING A SEMICONDUCTOR DEVICE USING TREATED PHOTORESIST
Title (en)
METHOD OF MAKING A SEMICONDUCTOR DEVICE USING TREATED PHOTORESIST
Title (de)
VERFAHREN ZUR HERSTELLUNG EINER HALBLEITERVORRICHTUNG UNTER VERWENDUNG EINES BEHANDELTEN FOTOLACKS
Title (fr)
PROCEDE DE FABRICATION D'UN DISPOSITIF SEMICONDUCTEUR AU MOYEN D'UNE PHOTORESINE TRAITEE
Publication
Application
Priority
- US 2005000961 W 20050112
- US 77900704 A 20040213
Abstract (en)
[origin: US2005181630A1] A semiconductor device is made by patterning a conductive layer for forming gates of transistors. The process for forming the gates has a step of patterning photoresist that overlies the conductive layer. The patterned photoresist is trimmed so that its width is reduced. Fluorine, preferably F<SUB>2</SUB>, is applied to the trimmed photoresist to increase its hardness and its selectivity to the conductive layer. Using the trimmed and fluorinated photoresist as a mask, the conductive layer is etched to form conductive features useful as gates. Transistors are formed in which the conductive pillars are gates. Other halogens, especially chlorine, may be substituted for the fluorine.
IPC 8 full level
H01L 21/027 (2006.01); H01L 21/28 (2006.01); H01L 21/3213 (2006.01); H01L 21/336 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/033 (2006.01)
CPC (source: EP KR US)
B82Y 40/00 (2013.01 - KR); G03F 7/26 (2013.01 - KR); H01L 21/0273 (2013.01 - EP KR US); H01L 21/0338 (2013.01 - KR); H01L 21/28123 (2013.01 - EP KR US); H01L 21/32139 (2013.01 - EP KR US); H01L 29/66477 (2013.01 - EP KR US); H01L 29/78 (2013.01 - EP KR US); H01L 21/0338 (2013.01 - EP US); Y10S 438/945 (2013.01 - EP KR US); Y10S 438/947 (2013.01 - EP KR US)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
US 2005181630 A1 20050818; US 7157377 B2 20070102; CN 100487873 C 20090513; CN 1918700 A 20070221; EP 1719162 A2 20061108; EP 1719162 A4 20090520; EP 1719162 B1 20160323; EP 1719162 B8 20160511; JP 2007522673 A 20070809; KR 101128260 B1 20120326; KR 20060114716 A 20061107; US 2005224455 A1 20051013; WO 2005082122 A2 20050909; WO 2005082122 A3 20060216
DOCDB simple family (application)
US 77900704 A 20040213; CN 200580004804 A 20050112; EP 05711379 A 20050112; JP 2006553127 A 20050112; KR 20067016205 A 20050112; US 14329505 A 20050602; US 2005000961 W 20050112