EP 1723669 A1 20061122 - EEPROM MEMORY CELL FOR HIGH TEMPERATURES
Title (en)
EEPROM MEMORY CELL FOR HIGH TEMPERATURES
Title (de)
EEPROM-SPEICHERZELLE FÜR HOHE TEMPERATUREN
Title (fr)
CELLULE DE MEMOIRE EEPROM DESTINEE A DES TEMPERATURES ELEVEES
Publication
Application
Priority
- EP 2005051099 W 20050310
- DE 102004011858 A 20040311
Abstract (en)
[origin: WO2005088705A1] The invention relates to an EEPROM memory cell for using at high temperatures, said memory cell being produced by SOI technology. An EEPROM cell for high temperatures consists of three MOS transistors. The inventive EEPROM cell is formed from a memory transistor comprising a floating gate and a high-voltage transistor provided with a body connection that can be freely occupied. A constructive change in the structure of the high-voltage transistor enables the use of a third transistor in the memory cell to be avoided, reducing the surface of the semiconductor wafer and thus also costs.
IPC 8 full level
H01L 21/84 (2006.01); H01L 21/8247 (2006.01); H01L 27/115 (2006.01); H01L 27/12 (2006.01)
CPC (source: EP US)
H01L 21/84 (2013.01 - EP US); H01L 27/1203 (2013.01 - EP US); H10B 41/30 (2023.02 - EP US); H10B 41/35 (2023.02 - EP US); H10B 69/00 (2023.02 - EP US)
Citation (search report)
See references of WO 2005088705A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2005088705 A1 20050922; DE 102004011858 A1 20051201; DE 102004011858 A8 20060330; DE 102004011858 B4 20091105; EP 1723669 A1 20061122; US 2007194378 A1 20070823
DOCDB simple family (application)
EP 2005051099 W 20050310; DE 102004011858 A 20040311; EP 05716998 A 20050310; US 59224605 A 20050310