EP 1723680 A1 20061122 - PN DIODE BASED ON SILICON CARBIDE AND METHOD FOR THE PRODUCTION THEREOF
Title (en)
PN DIODE BASED ON SILICON CARBIDE AND METHOD FOR THE PRODUCTION THEREOF
Title (de)
PN-DIODE AUF DER BASIS VON SILICIUMCARBID UND VERFAHREN ZU DEREN HERSTELLUNG
Title (fr)
DIODE PN A BASE DE CARBURE DE SILICIUM ET SON PROCEDE DE FABRICATION
Publication
Application
Priority
- EP 2005051111 W 20050311
- DE 102004012047 A 20040311
Abstract (en)
[origin: WO2005088728A1] The invention relates to a pn diode based on SiC and exhibiting an avalanche behaviour, said diode containing an anode and a cathode and interlying n-conductive and p-conductive layers with pn junctions. According to the invention, a cell field (22) is created on said diode by means of at least one cavity-like feature (22ik). Preferably, a structure of tightly arranged cells is created. The invention also relates to a corresponding production method whereby an n-doped layer is epitaxially grown on the wafer, followed by a p-doped layer, and the cell field regions are deep-etched to a pre-determined depth.
IPC 8 full level
H01L 21/04 (2006.01); H01L 29/24 (2006.01); H01L 29/861 (2006.01)
CPC (source: EP)
H01L 29/1608 (2013.01); H01L 29/8611 (2013.01)
Citation (search report)
See references of WO 2005088728A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2005088728 A1 20050922; DE 102005011703 A1 20050929; EP 1723680 A1 20061122
DOCDB simple family (application)
EP 2005051111 W 20050311; DE 102005011703 A 20050311; EP 05717007 A 20050311