EP 1724831 A2 20061122 - Lead-free semiconductor device
Title (en)
Lead-free semiconductor device
Title (de)
Bleifreie Halbleiteranordnung
Title (fr)
Dispositif à semiconducteur exempte de plomb
Publication
Application
Priority
JP 2005143276 A 20050516
Abstract (en)
A an aspect of the present invention, a semiconductor device includes a lead frame having a lower base structure of oxygen free copper or copper-based alloy and having terminals; a semiconductor chip connected with the terminals of the lead frame; and a mold resin configured to cover the semiconductor chip. The lead frame has an exposed portion from the mold resin, and the exposed portion includes a diffusion prevention film formed on or above the lower base structure of the lead frame; and a Sn-Bi (tin-bismuth) film formed on the diffusion prevention film.
IPC 8 full level
H01L 23/495 (2006.01)
CPC (source: EP US)
H01L 23/49503 (2013.01 - EP US); H01L 23/49582 (2013.01 - EP US); H05K 3/3426 (2013.01 - EP US); H01L 23/3107 (2013.01 - EP US); H01L 23/49579 (2013.01 - EP US); H01L 24/45 (2013.01 - EP US); H01L 24/48 (2013.01 - EP US); H01L 2224/45144 (2013.01 - EP US); H01L 2224/48091 (2013.01 - EP US); H01L 2224/48247 (2013.01 - EP US); H01L 2924/01028 (2013.01 - EP US); H01L 2924/01046 (2013.01 - EP US); H01L 2924/01078 (2013.01 - EP US); H01L 2924/01079 (2013.01 - EP US); H01L 2924/01327 (2013.01 - EP US); H01L 2924/181 (2013.01 - EP US); H05K 3/244 (2013.01 - EP US); H05K 3/341 (2013.01 - EP US); H05K 3/3463 (2013.01 - EP US); H05K 2201/10909 (2013.01 - EP US); Y02P 70/50 (2015.11 - EP US)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR
Designated extension state (EPC)
AL BA HR MK YU
DOCDB simple family (publication)
EP 1724831 A2 20061122; JP 2006319288 A 20061124; US 2006255437 A1 20061116
DOCDB simple family (application)
EP 06009981 A 20060515; JP 2005143276 A 20050516; US 43340006 A 20060515