EP 1726038 A1 20061129 - METHOD FOR THE PRODUCTION OF A BIPOLAR TRANSISTOR COMPRISING AN IMPROVED BASE TERMINAL
Title (en)
METHOD FOR THE PRODUCTION OF A BIPOLAR TRANSISTOR COMPRISING AN IMPROVED BASE TERMINAL
Title (de)
VERFAHREN ZUR HERSTELLUNG EINES BIPOLARTRANSISTORS MIT VERBESSERTERM BASISANSCHLUSS
Title (fr)
PROCEDE DE PRODUCTION D'UN TRANSISTOR BIPOLAIRE DOTE D'UNE BORNE DE BASE AMELIOREE
Publication
Application
Priority
- EP 2005000500 W 20050119
- DE 102004013478 A 20040318
Abstract (en)
[origin: WO2005098926A1] The invention relates to the production of an improved bipolar transistor provided with a low-ohomic base terminal. According to said method, a dielectric layer is to be deposited on a semi-conductor substrate and high doping is to be carried via an implantation mask. In a subsequent controlled thermal step, the dopant is then diffused inside the semi-conductor substrate by the dielectric layer which acts as a dopant store. As a result, a low-ohmic region is produced which defines the extrinsic base in a precise manner.
IPC 8 full level
H01L 21/331 (2006.01)
CPC (source: EP US)
H01L 29/66242 (2013.01 - EP US); H01L 29/66287 (2013.01 - EP US)
Citation (search report)
See references of WO 2005098926A1
Designated contracting state (EPC)
FR GB IE IT
DOCDB simple family (publication)
DE 102004013478 A1 20051006; DE 102004013478 B4 20100401; EP 1726038 A1 20061129; US 2007269953 A1 20071122; US 7618871 B2 20091117; WO 2005098926 A1 20051020
DOCDB simple family (application)
DE 102004013478 A 20040318; EP 05706930 A 20050119; EP 2005000500 W 20050119; US 59314105 A 20050119