EP 1726039 A1 20061129 - HEAT TREATMENT AFTER A SMART-CUT SEPARATION
Title (en)
HEAT TREATMENT AFTER A SMART-CUT SEPARATION
Title (de)
WÄRMEBEHANDLUNG NACH SMART-CUT-TRENNUNG
Title (fr)
TRAITEMENT THERMIQUE APRES DETACHEMENT SMART-CUT
Publication
Application
Priority
- FR 2005000543 W 20050307
- FR 0402340 A 20040305
Abstract (en)
[origin: US2005196936A1] A method for thermally treating a semiconductor layer is described. An embodiment of the technique includes implanting atomic species into a first surface of a donor wafer to form a zone of weakness at a predetermined depth that defines the thickness of a transfer layer, bonding the first surface of the donor wafer to a host wafer, supplying energy to detach the transfer layer from the donor wafer at the zone of weakness, and conducting a recovery operation on the transfer layer. The recovery operation is conducted after detachment but while the layer remains in contact with the donor wafer. The recovery operation includes heat treating the transfer layer for a predetermined duration at a recovery temperature that is lower than a re-adhesion temperature at which the transfer layer would re-adhere to the donor wafer, to improve the crystalline quality and the surface roughness of the transfer layer.
IPC 8 full level
H01L 21/762 (2006.01)
CPC (source: EP KR US)
H01L 21/30 (2013.01 - KR); H01L 21/76254 (2013.01 - EP US); Y02P 70/50 (2015.11 - EP US)
Citation (search report)
See references of WO 2005086228A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
FR 2867307 A1 20050909; FR 2867307 B1 20060526; CN 100592493 C 20100224; CN 1930674 A 20070314; CN 1950937 A 20070418; CN 1950937 B 20100616; CN 1950938 A 20070418; EP 1726039 A1 20061129; JP 2007526646 A 20070913; JP 4876068 B2 20120215; KR 100910687 B1 20090804; KR 20070088279 A 20070829; US 2005196936 A1 20050908; US 7285495 B2 20071023; WO 2005086228 A1 20050915
DOCDB simple family (application)
FR 0402340 A 20040305; CN 200580007126 A 20050307; CN 200580014163 A 20050307; CN 200580014164 A 20050307; EP 05737041 A 20050307; FR 2005000543 W 20050307; JP 2007501320 A 20050307; KR 20067020808 A 20061004; US 5899205 A 20050216