EP 1729330 A1 20061206 - METHOD AND EQUIPMENT FOR FORMING CRYSTALLINE SILICON THIN FILM
Title (en)
METHOD AND EQUIPMENT FOR FORMING CRYSTALLINE SILICON THIN FILM
Title (de)
VERFAHREN UND EINRICHTUNGEN ZUR BILDUNG EINES KRISTALLINEN SILIZIUM-DÜNNFILMS
Title (fr)
METHODE ET EQUIPEMENT POUR FORMER UN FILM MINCE DE SILICONE CRISTALLINE
Publication
Application
Priority
- JP 2005005660 W 20050322
- JP 2004091709 A 20040326
Abstract (en)
A hydrogen gas is supplied into a deposition chamber (10) accommodating a silicon sputter target (2) and a deposition target substrate (S), a high-frequency power is applied to the gas to generate plasma exhibiting H±/SiH* from 0.3 to 1.3 in the deposition chamber, and chemical sputtering is effected on the silicon sputter target (2) by the plasma to form a crystalline silicon thin film on the substrate (2). A crystalline silicon thin film of a good quality can be formed inexpensively and safely at a relatively low temperature.
IPC 8 full level
H01L 21/203 (2006.01); C23C 14/14 (2006.01); C23C 14/34 (2006.01); H01J 37/34 (2006.01)
CPC (source: EP KR US)
C23C 14/14 (2013.01 - EP KR US); C23C 14/3471 (2013.01 - EP KR US); H01J 37/34 (2013.01 - EP KR US); H01L 21/02422 (2013.01 - EP KR US); H01L 21/02532 (2013.01 - EP KR US); H01L 21/02631 (2013.01 - EP KR US)
Citation (search report)
See references of WO 2005093797A1
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 1729330 A1 20061206; CN 100468630 C 20090311; CN 1934680 A 20070321; JP 4258549 B2 20090430; JP WO2005093797 A1 20070816; KR 100814453 B1 20080317; KR 20060124777 A 20061205; TW 200536948 A 20051116; TW I277661 B 20070401; US 2007004111 A1 20070104; WO 2005093797 A1 20051006
DOCDB simple family (application)
EP 05721587 A 20050322; CN 200580009563 A 20050322; JP 2005005660 W 20050322; JP 2006519452 A 20050322; KR 20067019603 A 20060922; TW 94109135 A 20050324; US 51912806 A 20060912