EP 1730785 A2 20061213 - BIPOLAR-TRANSISTOR AND METHOD FOR THE PRODUCTION OF A BIPOLAR-TRANSISTOR
Title (en)
BIPOLAR-TRANSISTOR AND METHOD FOR THE PRODUCTION OF A BIPOLAR-TRANSISTOR
Title (de)
BIPOLAR-TRANSISTOR UND VERFAHREN ZUR HERSTELLUNG EINES BIPOLAR-TRANSISTORS
Title (fr)
TRANSISTOR BIPOLAIRE ET PROCEDE DE PRODUCTION D'UN TRANSISTOR BIPOLAIRE
Publication
Application
Priority
- EP 2005003129 W 20050324
- DE 102004016992 A 20040402
Abstract (en)
[origin: WO2005098960A2] The invention relates to NPN and PNP bipolar transistors and to a method for the production thereof, said transistors being characterised by a particularly high collector-emitter and collector-base blocking voltage. The blocking voltage is increased by a particular doping profile. An NPN bipolar transistor comprises a p-doped substrate (1), a trenched n-doped layer (3) forming the collector, a p-doped layer (7) which is arranged above the trenched n-doped layer and is made of a base and an n-doped layer which is arranged within the p-doped layer and forms an emitter of the transistor. A spatial charge area (RLZ 1) is formed between the p-doped layer and the trenched n-doped layer and a second spatial charge area (RLZ 2) is formed between the trenched n-doped layer and the p-doped substrate, which expands in the vertical direction on the collector when the transistor is operated with an increasing potential. The trenched n-doped layer comprises a doping profile in such a manner that when the transistor is operated with an increasing potential, the first and the second spatial charge area expand on the collector, transversing the entire depth of the trenched n-doped layer prior to the critical field strength for a breakthrough being reached between the collector and emitter.
IPC 8 full level
H01L 21/331 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/732 (2006.01)
CPC (source: EP US)
H01L 29/0615 (2013.01 - EP US); H01L 29/0821 (2013.01 - EP US); H01L 29/66272 (2013.01 - EP US); H01L 29/7322 (2013.01 - EP US)
Citation (search report)
See references of WO 2005098960A2
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2005098960 A2 20051020; WO 2005098960 A3 20060420; DE 102004016992 A1 20051027; DE 102004016992 B4 20090205; EP 1730785 A2 20061213; JP 2007531292 A 20071101; JP 5031552 B2 20120919; US 2007273007 A1 20071129; US 7563685 B2 20090721
DOCDB simple family (application)
EP 2005003129 W 20050324; DE 102004016992 A 20040402; EP 05728216 A 20050324; JP 2007505455 A 20050324; US 54753205 A 20050324