EP 1733423 A1 20061220 - HEAT TREATMENT FOR IMPROVING THE QUALITY OF A TAKEN THIN LAYER
Title (en)
HEAT TREATMENT FOR IMPROVING THE QUALITY OF A TAKEN THIN LAYER
Title (de)
WÄRMEBEHANDLUNG ZUR VERBESSERUNG DER QUALITÄT EINER GENOMMENEN DÜNNEN SCHICHT
Title (fr)
TRAITEMENT THERMIQUE D'AMELIORATION DE LA QUALITE D'UNE COUCHE MINCE PRELEVEE
Publication
Application
Priority
- FR 2005000541 W 20050307
- FR 0402340 A 20040305
- FR 0409980 A 20040921
Abstract (en)
[origin: US2005196937A1] Methods for forming a semiconductor structure are described. In an embodiment, the technique includes providing a donor wafer having a first semiconductor layer and a second semiconductor layer on the first layer and having a free surface, implanting atomic species through the free surface of the second layer to form a zone of weakness zone in the first layer, and bonding the free surface of the second layer to a host wafer. The method also includes supplying energy to detach at the zone of weakness a semiconductor structure comprising the host wafer, the second layer and a portion of the first layer, conducting a bond strengthening step on the structure after detachment at a temperature of less than about 800° C. to improve the strength of the bond between the second layer and the host wafer, and selectively etching the first layer portion to remove it from the structure and to expose a surface of the second layer. The implanting step includes implantation parameters chosen to minimize surface roughness resulting from detachment at the zone of weakness.
IPC 8 full level
H01L 21/762 (2006.01)
CPC (source: EP KR US)
H01L 21/762 (2013.01 - KR); H01L 21/76254 (2013.01 - EP US)
Citation (search report)
See references of WO 2005086226A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
FR 2867310 A1 20050909; FR 2867310 B1 20060526; EP 1721333 A1 20061115; EP 1733423 A1 20061220; JP 2007526644 A 20070913; JP 2007526645 A 20070913; JP 4876067 B2 20120215; KR 100860271 B1 20080925; KR 20070085086 A 20070827; US 2005196937 A1 20050908; US 2005245049 A1 20051103; US 7276428 B2 20071002; US 7449394 B2 20081111; WO 2005086226 A1 20050915; WO 2005086226 A8 20061026; WO 2005086227 A1 20050915; WO 2005086227 A8 20061019
DOCDB simple family (application)
FR 0409980 A 20040921; EP 05737043 A 20050307; EP 05737045 A 20050307; FR 2005000541 W 20050307; FR 2005000542 W 20050307; JP 2007501318 A 20050307; JP 2007501319 A 20050307; KR 20067020815 A 20061004; US 17971305 A 20050711; US 5912205 A 20050216